本研究目的是透過InGaN-based LEDs電特性及光譜間變化的關係對不同尺寸下三波長晶粒的載流子傳輸及複合方式進行分析，三波長晶粒分別是具有不同銦含量的紫外光、紫光及藍光，首先以單脈衝電流模式作為輸入，對三波長晶粒進行電性分析推得理想因子，並藉由積分球進行光譜量測，透過比較發射光譜的比較表明，隨著電流密度的增加，擴散，複合和隧穿在載流子傳輸機制中占主導地位，並且載流子傳輸機制與發射光譜的拓寬之間存在相關性。然而，隨著含有豐富In藍色LEDs中電流密度的增加，與缺陷相關的發射光譜增加和發射峰的藍移是更加明顯，理論模型表示當電流密度上升，載子數目增加，LEDs接面溫度也隨之上升，在量子井中載流子密度的增加導致載流子隧穿，複合，擴散電流和溢流的增加，因此理想因子和插牆效率降低。

The purpose of this research is to analyze the carrier transport mechanisms and recombination of three wavelength chips at different sizes through the relationship between InGaN-based LEDs electrical characteristics and spectral changes. The three-wavelength chips are ultraviolet light, violet light and blue light with different indium contents, respectively. First of all, use a single-pulsed current mode as input, and perform electrical analysis on the three-wavelength chips of different sizes to calculate the ideal factor. Spectral measurement by integrating spheres. A comparison of the emission spectra shows that with an increase in the current density, diffusion, recombination, and tunneling dominate the carrier transport mechanism, and a correlation exists between the carrier transport mechanisms and the broadening of the emission spectrum. However, the increase in defect-related emissions and the blue shift of the emission peak are more noticeable with an increase in the current density in In-rich blue LEDs. The increase in carrier density in the quantum well causes a growth of the carrier tunneling, recombination, diffusion, and overflow due to which the ideality factor and efficiency decrease.

[1] G. Verzellesi et al., "Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies," Journal of Applied Physics, Review vol. 114, no. 7, 2013, Art. no. 071101.
[2] E. F. Schubert, Light-emitting diodes, second ed. 2006.
[3] Y. S. Lin et al., "Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells," Applied Physics Letters, Article vol. 77, no. 19, pp. 2988-2990, 2000.
[4] D. S. Shin, D. P. Han, J. Y. Oh, and J. I. Shim, "Study of droop phenomena in InGaN-based blue and green light-emitting diodes by temperature-dependent electroluminescence," Applied Physics Letters, Article vol. 100, no. 15, 2012, Art. no. 153506.
[5] Z. Li et al., "Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells," Journal of Applied Physics, Article vol. 115, no. 8, 2014, Art. no. 083112.
[6] M. Auf Der Maur, A. Pecchia, G. Penazzi, W. Rodrigues, and A. Di Carlo, "Efficiency Drop in Green InGaN/GaN Light Emitting Diodes: The Role of Random Alloy Fluctuations," Physical Review Letters, Article vol. 116, no. 2, 2016, Art. no. 027401.
[7] T. Langer, H. Jönen, A. Kruse, H. Bremers, U. Rossow, and A. Hangleiter, "Strain-induced defects as nonradiative recombination centers in green-emitting GaInN/GaN quantum well structures," Applied Physics Letters, Article vol. 103, no. 2, 2013, Art. no. 022108.
[8] J. H. Park, J. Cho, E. F. Schubert, and J. K. Kim, "The effect of imbalanced carrier transport on the efficiency droop in GaInN-Based blue and green light-emitting diodes," Energies, Article vol. 10, no. 9, 2017, Art. no. 1277.
[9] T. Takeuchi et al., "Quantum-confined Stark effect in strained GaInN quantum wells on sapphire (0 0 0 1)," Journal of Crystal Growth, Article vol. 189-190, pp. 616-620, 1998.
[10] S. H. Han et al., "Effect of internal electric field in well layer of InGaN/GaN multiple quantum well light-emitting diodes on efficiency droop," Japanese Journal of Applied Physics, Article vol. 51, no. 10, 2012, Art. no. 100201.
[11] V. Avrutin, S. D. A. Hafiz, F. Zhang, Ü. Özgür, H. Morkoç, and A. Matulionis, "InGaN light-emitting diodes: Efficiency-limiting processes at high injection," Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Review vol. 31, no. 5, 2013, Art. no. 050809.
[12] X. Meng et al., "Study on efficiency droop in InGaN/GaN light-emitting diodes based on differential carrier lifetime analysis," Applied Physics Letters, Article vol. 108, no. 1, 2016, Art. no. 013501.
[13] C. De Santi et al., "Role of defects in the thermal droop of InGaN-based light emitting diodes," Journal of Applied Physics, Article vol. 119, no. 9, 2016, Art. no. 094501.
[14] C. Lu et al., "Investigation of the electroluminescence spectrum shift of InGaN/GaN multiple quantum well light-emitting diodes under direct and pulsed currents," Journal of Applied Physics, Article vol. 113, no. 1, 2013, Art. no. 013102.
[15] D. P. Han et al., "Analysis of nonradiative recombination mechanisms and their impacts on the device performance of InGaN/GaN light-emitting diodes," Japanese Journal of Applied Physics, Article vol. 54, no. 2, 2015, Art. no. 02ba01.
[16] N. Nepal, J. Li, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, "Temperature and compositional dependence of the energy band gap of AlGaN alloys," Applied Physics Letters, Article vol. 87, no. 24, pp. 1-3, 2005, Art. no. 242104.
[17] L. Wang et al., "Influence of carrier screening and band filling effects on efficiency droop of InGaN light emitting diodes," Optics Express, Article vol. 19, no. 15, pp. 14182-14187, 2011.
[18] Y. Tu et al., "Influences of point defects on electrical and optical properties of InGaN light-emitting diodes at cryogenic temperature," Journal of Applied Physics, Article vol. 123, no. 16, 2018, Art. no. 161544.
[19] D. H. Kim, Y. S. Park, D. Kang, K. K. Kim, T. Y. Seong, and H. Amano, "Combined effects of V pits and chip size on the electrical and optical properties of green InGaN-based light-emitting diodes," Journal of Alloys and Compounds, Article vol. 796, pp. 146-152, 2019.
[20] Z. Gong et al., "Size-dependent light output, spectral shift, and self-heating of 400 nm InGaN light-emitting diodes," Journal of Applied Physics, Article vol. 107, no. 1, 2010, Art. no. 013103.
[21] F. Olivier, A. Daami, C. Licitra, and F. Templier, "Shockley-Read-Hall and Auger non-radiative recombination in GaN based LEDs: A size effect study," Applied Physics Letters, Article vol. 111, no. 2, 2017, Art. no. 022104.
[22] Y. Xi and E. F. Schubert, "Junction-temperature measurement in GaN ultraviolet light-emitting diodes using diode forward voltage method," Applied Physics Letters, Article vol. 85, no. 12, pp. 2163-2165, 2004.
[23] Y. P. Varshni, "Temperature dependence of the energy gap in semiconductors," 1967.
[24] 方昱棋, "晶粒尺寸效應對白光發光二極體發光顏色之影響," 碩士論文, 國立臺灣科技大學, 2015.
[25] A. Keppens, W. R. Ryckaert, G. Deconinck, and P. Hanselaer, "High power light-emitting diode junction temperature determination from current-voltage characteristics," Journal of Applied Physics, Article vol. 104, no. 9, 2008, Art. no. 093104.
[26] D. S. Meyaard, J. Cho, E. Fred Schubert, S. H. Han, M. H. Kim, and C. Sone, "Analysis of the temperature dependence of the forward voltage characteristics of GaInN light-emitting diodes," Applied Physics Letters, Article vol. 103, no. 12, 2013, Art. no. 121103.
[27] W. Shan, B. D. Little, J. J. Song, Z. C. Feng, M. Schurman, and R. A. Stall, "Optical transitions in InxGa1-xN alloys grown by metalorganic chemical vapor deposition," Applied Physics Letters, Article vol. 69, no. 22, pp. 3315-3317, 1996.
[28] J. C. Su and C. H. Chuang, "Carrier transport mechanisms of InGaN-based light-emitting diodes using a single pulsed current," Superlattices and Microstructures, Article vol. 128, pp. 319-326, 2019.
[29] P. Dalapati, N. B. Manik, and A. N. Basu, "Influence of temperature on different optoelectronic characteristics of InGaN light emitting diodes," Optical and Quantum Electronics, Article vol. 49, no. 8, 2017, Art. no. 265.
[30] P. Dalapati, N. B. Manik, and A. N. Basu, "Studies on the Effect of Temperature on Electroluminescence, Current–Voltage, and Carrier Lifetimes Characteristics in a InGaN/Sapphire Purple Light Emitting Diode," Journal of Electronic Materials, Article vol. 45, no. 6, pp. 2683-2691, 2016.
[31] 莊志軒, "大尺寸氮化鎵基發光二極體在脈衝電流操作下之電、光及熱性分析," 碩士論文, 國立臺灣科技大學, 2018.
[32] D. Zhu et al., "The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes," Applied Physics Letters, Article vol. 94, no. 8, 2009, Art. no. 081113.
[33] P. Biljanovic and T. Suligoj, "Thermionic emission process in carrier transport in pn homojunctions," in Proceedings of the Mediterranean Electrotechnical Conference - MELECON, 2000, vol. 1, pp. 248-251.
[34] D. Yan, H. Lu, D. Chen, R. Zhang, and Y. Zheng, "Forward tunneling current in GaN-based blue light-emitting diodes," Applied Physics Letters, Article vol. 96, no. 8, 2010, Art. no. 083504.
[35] N. I. Bochkareva et al., "Defect-related tunneling mechanism of efficiency droop in III-nitride light-emitting diodes," Applied Physics Letters, Article vol. 96, no. 13, 2010, Art. no. 133502.
[36] L. Pelaz, J. L. Orantes, L. Enríquez, L. Bailón, and J. Barbolla, "Saturation of generation-recombination current for very small recombination times," Journal of Applied Physics, Article vol. 76, no. 11, pp. 7384-7389, 1994.
[37] X. A. Cao, E. B. Stokes, P. M. Sandvik, S. F. LeBoeuf, J. Kretchmer, and D. Walker, "Diffusion and tunneling currents in GaN/InGaN multiple quantum well light-emitting diodes," IEEE Electron Device Letters, Article vol. 23, no. 9, pp. 535-537, 2002.
[38] J. M. Shah, Y. L. Li, T. Gessmann, and E. F. Schubert, "Experimental analysis and theoretical model for anomalously high ideality factors (n≫2.0) in AlGaN/GaN p-n junction diodes," Journal of Applied Physics, Article vol. 94, no. 4, pp. 2627-2630, 2003.
[39] P. Prajoon, D. Nirmal, M. A. Menokey, and J. C. Pravin, "Temperature-dependent efficiency droop analysis of InGaN MQW light-emitting diode with modified ABC model," Journal of Computational Electronics, Article vol. 15, no. 4, pp. 1511-1520, 2016.
[40] X. A. Cao and S. F. LeBoeuf, "Current and temperature dependent characteristics of deep-ultraviolet light-emitting diodes," IEEE Transactions on Electron Devices, Article vol. 54, no. 12, pp. 3414-3417, 2007.
[41] X. A. Cao, S. F. LeBoeuf, and T. E. Stecher, "Temperature-dependent electroluminescence of AlGaN-based UV LEDs," IEEE Electron Device Letters, Article vol. 27, no. 5, pp. 329-331, 2006.
[42] F. Nippert et al., "Temperature-dependent recombination coefficients in InGaN light-emitting diodes: Hole localization, Auger processes, and the green gap," Applied Physics Letters, Article vol. 109, no. 16, 2016, Art. no. 161103.
[43] A. F. M. Anwar, S. Wu, and R. T. Webster, "Temperature dependent transport properties in GaN, AlxGa1-xN, and InxGa1-xN semiconductors," IEEE Transactions on Electron Devices, Article vol. 48, no. 3, pp. 567-572, 2001.