本論文主要是探討製作不同間距之陣列式奈米鑽石薄膜元件於場發射特性之影響以及不同壓力在氮氣氣體感測特性之影響。本研究中係使用微波電漿化學氣相沉積系統將奈米鑽石薄膜沉積於矽基材上，藉由場發射電子顯微鏡觀察薄膜的表面形態，並分別利用拉曼光譜儀與化學分析電子光譜儀及原子力顯微鏡分析薄膜品質特徵與薄膜表面元素成份以及薄膜表面粗糙度，再分別利用黃光微影與磁控濺鍍系統及微波電漿化學氣相沉積系統於矽基板上製作陣列式奈米鑽石元件，並進行場發射以及離子性氣體感測特性量測。
場發射特性是在外加陽極電壓0 V~1100 V下進行量測，隨著陣列式奈米鑽石元件間距增加，可獲得較低的起始電場以及較高的場增強因子，與沒有陣列式結構之奈米鑽石薄相比較，可有效地改善場發射特性。然而，隨著陣列式結構間距由 100μm 增加至 1000 μm 時，起始電場可由 14.67 V/μm 降低至 8.5 V/μm，結果顯示了間距的增加，可更進一步降低起始電場與提高電流密度。在不同奈米鑽石元件間距下，通入氮氣，改變壓力(固定腔體體積下)，觀察氣體崩潰電壓與壓力之關係。在陣列式結構間距較小之情況下，所感測出氮氣體崩潰電壓對壓力之關係較低。

In this dissertation, the different array interval structure of nanocrystalline diamond (NCD) films were fabricated to study the effect on the field emission properties and gas ionization sensors on different pressure in nitrogen gas, respectively. NCD films were deposited on silicon substrate by microwave plasma chemical vapor deposition system. The surface morphology of NCD films were characterized by the field emission scanning electron microscopy. The characterization of NCD films were analyzed by Raman, XPS and AFM to show the quality, the surface composition and average roughness of nanocrystalline diamond, respectively. The array structures were fabricated by photolithography technique with the interval of 100 , 500 and 1000μm, respectively..
Field emission properties were measured with anode voltage from 0 to 1100 V. It is found that the turn on electric field were improved from 14.67 V/μm to 8.5 V/μm when the array structure interval was increased from 100μm to 1000μm. It is indicated that the field emission properties were improved with the array interval increased. The arrayed nano-crystalline diamond devices of gas ionization sensors were performed using N2 gas with the array interval of 100, 500 and 1000μm, respectively. However, it was found that the breakdown voltage decreased with the array interval decreased.

[1] T. W. Odom, J. L. Huang, P. Kim, and C.M. Lieber, “Atomic structure and electronic properties of single-walled carbon nanotubes”, Nature, pp. 62 (1998)
[2] H. Dai, J. Kong, C. Zhou, N. Franklin, T. Tmobler, A. Cassell, S. Fan, and M. Chapline, “Controlled chemical routes to nanotube architectures, physics, and devices”, Journal of Physical Chemistry, pp. 11246 (1999).
[3] S. J. Tans, R. M. Verschueren, and C. Dekker, “Room-temperature transistor based on a single carbon nanotube”, Nature, pp. 49 (1998)
[4] M. S. Fuhrer, J. Nygard, L. Shih, M. Forero, Y. G. Yoon, M. S. C. Mazzoni, H. J. Choi, J. Ihm, S. G. Louie, A. Zettl, and P. L. McEuen, “Crossed nanotube junctions”, Science, pp. 494 (2000)
[5] P. G. Collins, M. S. Arnold, P. Avouris, “Engineering carbon nanotubes and nanotube circuits using electrical breakdown”, Science, pp.706 (2001)
[6] Q. H. Wang, A. A. Setlur, J. M. Lauerhaas, J. Y. Dai,E. W. Seelig, and R. P. H. Chang, “A nanotube-based field-emission flat panel display” ,Appl. Phys, pp. 2912 (1998)
[7] Yiming Li ,Hung-Mu Chou ,Jam-Wem Lee, Bo-Shian Lee, “A three-dimensional simulation of electrostatic characteristics for carbon nanotube array field effect transistors”, Microelectronic Engineering, pp. 434 (2005.)
[8] S. Heinze, J. Tersoff , R. Martel, V. Derycke, J. Appenzeller, and Ph. Avouris, “Carbon Nanotubes as Schottky Barrier Transistors” ,Phys. Rev. Letter, pp. 106801 (2002)
[9] T. Iwasaki , R. Morikane , T. Edura , M. Tokuda , K. Tsutsui ,Y. Wada a,b, H. Kawarada, “Growth of dense single-walled carbon nanotubes in nano-sized silicon dioxide holes for future microelectronics”, Carbon, pp. 2351 (2007)
[10] Karl E. Spear, John P. Dismukes, Synthetic diamond, The Electrochemical Society Series, (1993)
[11] S. -Tong Lee, a, Zhangda Linb and Xin Jiangc, “CVD diamond films: nucleation and growth”, Materials Science and Engineering, pp. 123 (1999)
[12] Gordon Davies, Properties and growth of diamond, London : IEE, INSPEC pp. 3 (1994)
[13] A. J. Neves, Maria Helena Nazaré, Properties, Growth and Applications of Diamond, EMIS Group, Institution of Electrical Engineers (2001)
[14] Gordon Davies, Properties and growth of diamond, London : IEE, INSPEC pp. 288 (1994)
[15] Gordon Davies, Properties and growth of diamond, London : IEE, INSPEC pp. 9 (1994)
[16] Gordon Davies, Properties and growth of diamond, London : IEE, INSPEC pp. 375 (2001)
[17] C. A. Spindt, I. Brodie, L. Humphrey, and E. R. Westerberg, “Physical properties of thin-film field emission cathodes with molybdenum cones”, J. Appl. Phys, pp. 5248 (1976)
[18] G. G. P. van Gorkom and A. M. E. Hoeberechts, “Performance of silicon cold cathodes”, J. Vac. Sci. Technol, pp.108 (1986).
[19] F.J.Himpsel, J.A.Knapp, J.A.Van Vechten, and D.E.Eastman, “Quantum photoyield pf diamond (111) – A stable negative-affinity surface,” PhysRev ,pp. 624 (1979)
[20] C.Jany,F.Foulon,P.bergonzo,A.Brambilla,F.silva,A.Gicquel,T.Pochet,“Influence of the crystalline structure on the electrical properties of CVD diamond films”,Diamond and Related Materials,pp.741 (1996)
[21] G.H.Johnson, A.R.Badzian and M.W.Geis, Diamond and Diamondlike Materials Synthesis, MRS, Pittsburgh (1988)
[22] Gordon Davies, Simon C. Lawson, Alan T. Collins, Alison Mainwood, and Sarah J. Sharp, “Vacancy-related centers in diamond”,Diamond Relat.Mater, pp. 13157 (1992)
[23] 陳培麗，鑽石與類鑽薄膜簡介，科儀新知，第82頁，(1991)
[24] R.W.G.Wyckoff, Crystal Structures，Interscience，New York, (1964)
[25] B.T.Kelly,Physics of Graphite,Applied Science,London, (1981)
[26] M. A. Tamor, W. C. Vassell, “Raman “fingerprinting” of amorphous carbon films,” J. Appl. Phys, pp. 3823 (1994)
[27] D. W. Han, S. M. Jeong, H. K. Baik, S. J. Lee, N. C. Yang, D. H. Suh,“Electron injection enhancement by diamond-like carbon film in organic electroluminescence devices,” Thin Solid Films, pp. 190 (2002)
[28] Pawer, K. W. Nugent, Y. Lifshitz, G. D. Lempert, E. Grossman, J. Kulik, I. Avigal, R. Kalish, “ Systematic variation of the Raman spectra of DLC films as a function of sp2:sp3 composition,” Diamond and Related Materials, pp. 433 (1996)
[29] J.J. Cuomo, D.L. Pappas, J.Bruley, J.P. Doyle and K.L.Saenger, Vapor Deposition Processes for AmorphousCarbon Films with sp3 Fractions Approaching Diamond”,J. Appl. Phys, pp. 1706 (1991)
[30] C. Weissmantel, “Ion Based Growth of Special Films:Techniques and Mechanisms”, Thin Solid Films, pp. 55 (1982)
[31] Y. Lifshitz, S.R. Kasi and J.W. Rabelais,“Molecular-Dynamics of Amorphization by Introduction of Chemical Order in Crystalline NiZr2”, Phys, pp. 10468 (1990)
[32] J. Koike, D.M. Parkin and T.E. Mitchell, “Displacement Energy Threshold for Type IIa Diamond”, Appl. Phys.Lett, pp. 1450 (1992)
[33] D.R. Mckenzie, D. Muller and B.A, Pailthorpe,“Compressive Stress-Induced Formation of Thin-Film Tetrahedral Amorphous Carbon”,Phys.Rev.Lett, pp. 773 (1992)
[34] B.A. Pailthorpe, “Molecular-Dynamics Simulation of Atomic Process at the Low Temperature Diamond(111) surface”, J. Appl. Phys, pp. 543 (1991)
[35] H.P. Kaukonen and R,M, Nieminen, “Molecular-Dynamics of the Growth of Diamondlike Films by Energetic Carbon-Atim Beams”, Phys. Rev. Lett, pp. 620 (1992)
[36] J. Robertson, “Mechanical Properties and Structure of Diamond-like Carbon”,Diamond Relat.Mater, pp. 984 (1993)
[37] C.A. Davis, “A Simple Model for Formation of Compressive Stress in Thin Films by Ion Bombardment”, Thin Solid Films, pp. 30 (1993)
[38] Jong-Hee Park, T. S. Sudarshan, Chemical Vapor Deposition, The materials information society (1989)
[39] [39] R. F. Davis Noyes, Diamond Films and Coatings, Noyes publications, pp.69 (1993).
[40] Prasanta Kumar Datta, James Sinclair Gray, Royal Society of Chemistry (Great Britain) , Surface Engineering: Fundamentals of coatings , Royal Society of Chemistry, pp. 219 (1993)
[41] Huimin Liu, David S. Dandy, Diamond chemical vapor deposition, Noyes publications,(1996)
[42] X. Jiang, W. J. Zhang, M. Paul, and C.-P. Klages, “Diamond film orientation by ion bombardment during deposition”, Appl. Phys. Lett, pp. 1927 (1996)
[43] W. J. Zhang and X. Jiang, “The growth characteristics of (001) oriented diamond layers on (111) diamond face via bias-assisted chemical vapor deposition”, Appl. Phys. Lett, pp. 2195 (1996).
[44] Sumio Iijima, Yumi Aikawa, and Kazuhiro Baba, “Early formation of chemical vapor deposition diamond films”, Appl. Phys. Lett, pp. 2646 (1990)
[45] Paul A. Dennig and David A. Stevenson, “nfluence of substrate topography on the nucleation of diamond thin films”, Appl. Phys. Lett, p1562 (1992).
Y. Liu , C. Liu, Y. Chen, Y. Tzeng, P. Tso, I. Lin, “Effects of hydrogen additive on microwave plasma CVD of nanocrystalline diamond in mixtures of argon and methane” ,Diamond Related Mater,pp. 671 (2004)
[46] S. Matsumoto, Y. Sato, M .Kamo, and N. Setaka, “Vapor Deposition of Diamond Particles from Methane” ,Japanese J. Appl. Phys, pp. 183 (1982)
[47] Suneet Arora, V.D. Vankar, “Field emission characteristics of microcrystalline diamond films:Effect of surface coverage and thickness”,Thin Solid Films, pp. 1963 (2006).
[48] S. Matsumoto, M. Hino, T. Kobayashi, “Synthesis of Diamond Films in a rf induction Thermal Plasma”, Appl. Phys. Lett, pp. 737 (1987)
[49] D. E. Meyer, R. O. Dillon, J. A. Woollam, “Radio-frequency Plasma Chemical Vapor Deposition Growth of Diamond”,J. Vac. Sci. Technol., pp.2325 (1989)
[50] S. J. Kim, B. K. Jul, Y. H. Lee, B. S. Park, IEEE, 7-12, p526 (1996).
[51] O. Groning, O. M. Kuttel, C. H. Emmenegger, P. Groning and L. Schlapbach, “Field emission properties of carbon nanotubes”, J. Vac. Sci. technol, pp. 665 ( 2000)
[52] F. Paschen, Wied. Ann,p69 (1889).
[53] J. R. Zeidler, C. A. Hewett, R. Nguyen and C. R. Zeisse, “A diamond driver-active load pair fabricated by ion implantation”, Diamond Related Mater, pp. 1341 (1993)
[54] Gordon Davies, Properties and growth of diamond, INSPEC, the Institution of Electrical Engineers, London, UK, pp.323 (1994)
[55] S. Ghodbane, A. Deneuville, “Specific features of 325 nm Raman excitation of heavily boron doped polycrystalline diamond films”, Diamond & Related Materials, pp. 589 (2006).
[56] K.G. Saw, J. du Plessis, Materials Letters, pp. 1344 (2004)
[57] Somu Kumaragurubaran, Takatoshi Yamada, and Shinichi Shikata, “Core Level Photoelectron Spectroscopic Study on Oxidized Phosphorus-Doped
[58] (100) Diamond Surfaces after Vacuum Annealing”, Japanese Journal of Physics, pp. 4 (2009)
[59] Hyung Soo Uh, Sung Woo Ko, Kong Duk Lee, “Growth and field emission properties of carbon nanotubes on rapid thermal annealed Ni catalyst using PECVD”, Diamond & Related Materials,pp. 850 (2005)
[60] C. Y. Zhi, X. D. Bai, E. G. Wang, “Enhanced field emission from carbon nanotubes by hydrogen plasma treatment”, Appl.