矽鍺基光電晶體與光通訊相關積體電路設計｜國立臺灣科技大學博碩士論文系統

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研究生：	吳正宇 Cheng-Yu Wu
論文名稱：	矽鍺基光電晶體與光通訊相關積體電路設計 The Design of SiGe -Based Phototransistor and Integrating Circuits for Optical Communication
指導教授：	劉政光 Cheng-kuang Liu
口試委員:	李三良 San-Liang Lee 周肇基 Chao-chi Chou 徐世祥 Shih-hsiang Hsu
學位類別：	碩士 Master
系所名稱：	電資學院 - 電子工程系 Department of Electronic and Computer Engineering
論文出版年：	2009
畢業學年度：	97
語文別：	中文
論文頁數：	113
中文關鍵詞：	光電晶體、轉阻放大器、光通訊
外文關鍵詞：	phototransistor, transimpedance amplifier, optical communication
相關次數：	點閱：241 下載：3
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上一筆

本論文研究應用於光通訊系統的相關積體電路，包含發光元件、光接收元件、轉阻放大器、壓控振盪器與資料時脈回復電路。
第一部份探討光電晶體發光與檢光的設計，使用的是台積電0.35μm SiGe 3P3M製程，採用不同的射極面積元件，研究不同的面積下對發光與檢光特性的影響。
第二部份為差動式輸出轉阻放大器的設計，使用的是台積電0.35μm SiGe 3P3M製程，功率消耗在3.3V供應電壓下為34mV，在光檢測器輸入電容250fF時-3dB頻寬為2.44GHz。
第三部份為2.5GHz低功率與低雜訊的壓控振盪器設計，採用台積電0.18μm 1P6M COMS製程來實現，此壓控振盪器可調範圍為220MHz，偏移載波1MHz的相位雜訊為-119dBc/Hz，功率消耗為4.6mW。
最後模擬應用於光接收器之鎖相迴路式時脈資料回復電路，包含相位偵測器、充電泵、低通濾波器、壓控振盪器，其傳輸速率為2.5Gb/s。

This thesis studies integrated circuits that are related to the system of optical communication. It includes light-emitting device, light-receiving device, transimpedance amplifier(TIA), voltage-controllator oscillator (VCO), and clock and data recovery(CDR) circuit.

In the first part, the design of optical receving and light emitting devices are presented using the process of TSMC’s 0.35μm SiGe 3P3M. The effects of emitter area on the light-emitting and light-receving characteristics are presented.
In the second part, the design of TIA is presented using the process of TSMC’s 0.35μm SiGe 3P3M. The power consumption is 34mW from a 3.3V voltage supply. The -3dB bandwidth is 2.44GHz for a photodiode input capacitance of 0.25pF.

In part three, the design of 2.5-GHz low-power-consumption and low-noise VCO is studied using TSMC the process of 0.18μm 1P6M CMOS. It has a tunable frequency of 220MHz and a phase noise of -119dBc/Hz. The power consumption is 4.6mW, under 1.2V voltage supply.

Finally, a simulation study is made of the PLL-based CDR. It includes a phase detector, a charge-pump, a low-pass filter, and a VCO. The transmission rate is 2.5Gb/s.

中文摘要	I
英文摘要	II
誌謝	IV
目錄	V

第一章 緒論	1
1.1 前言......................................................................................1
1.2 研究動機......................................................................................2
1.3 內容簡介......................................................................................3

第二章 光通訊相關電路基本介紹..................................................5
   2.1 光通訊電路接收端架構簡介......................................................5
       2.1.1 光偵測器..........................................................................6
       2.1.2 轉阻放大器......................................................................6
       2.1.3 限幅放大器......................................................................7
       2.1.4 時脈與資料回復電路......................................................8
   2.2 電路設計流程與量測考量..........................................................9
2.2.1 設計流程..........................................................................9
       2.2.2 量測考量........................................................................11
2.3 眼圖與雜訊分析........................................................................12
       2.3.1 眼圖形成........................................................................12
       2.3.2 抖動的來源....................................................................12
       2.3.3 抖動的種類....................................................................13
       2.3.4 眼圖分析........................................................................14

第三章 矽鍺基光電晶體發光與檢光設計..................................16
3.1 光電晶體介紹............................................................................16
3.2 發光機制與原理........................................................................18
       3.2.1 半導體發光材料特性....................................................18
       3.2.2 復合機制研究與分析....................................................19
3.3 電晶體檢光原理........................................................................21
       3.3.1 光檢測原理....................................................................21
       3.3.2 光電晶體檢光作用原理................................................22
   3.4 矽鍺基光電晶體電路設計........................................................25
      3.4.1 光電晶體設計................................................................25
      3.4.2 光電晶體直流分析........................................................27
       3.4.3 光電晶體發光量測........................................................32
       3.4.4 光電晶體檢光量測........................................................36
   3.5 討論............................................................................................39

第四章 差動式輸出轉阻放大器設計與量測.............................42
4.1 轉阻放大器簡介........................................................................42
4.1.1 開迴路轉阻放大器........................................................44
       4.1.2 回授型轉阻放大器........................................................45
4.2 差動式輸出轉阻放大器架構設計............................................47
       4.2.1 Regulated Cascode電路架構介紹................................48
       4.2.2 Inductive peaking技巧介紹.......................................49
       4.2.3 主動式電感介紹............................................................51
    4.2.4 差動式輸出轉阻放大器電路模擬................................53
   4.3差動式輸出轉阻放大器量測與討論.........................................55
       4.3.1差動式輸出轉阻放大器量測方法與結果......................55
       4.3.2差動式輸出轉阻放大器討論與比較..............................57

第五章 低功耗與低雜訊壓控振盪器設計與量測....................61
   5.1 振盪器簡介...............................................................................61
5.2 振盪器基本理論........................................................................62
    5.2.1 LC振盪器.........................................................................63
    5.2.2 環形振盪器....................................................................64
5.3 低功耗與低雜訊壓控振盪器架構設計....................................66
5.3.1 交叉耦合對....................................................................66
       5.3.2 低功耗與低雜訊壓控振盪器設計................................67
       5.3.3 低功耗與低雜訊壓控振盪器電路模擬........................69
5.4 低功耗與低雜訊壓控振盪器量測與討論................................72
       5.4.1低功耗與低雜訊壓控振盪器量測方法與結果..............72
       5.4.2低功耗與低雜訊壓控振盪器討論與比較......................76

第六章 時脈與資料回復電路模擬...............................................78
   6.1 時脈資料回復電路系統簡介....................................................78
   6.2 隨機二進位資料產生器............................................................79
       6.2.1 不歸零式資料介紹........................................................79
       6.2.2 隨機二進位資料產生器................................................79
   6.3 時脈資料回復電路研究.........................................................82
       6.3.1 時脈資料回復電路系統架構........................................82
       6.3.2 相位偵測器....................................................................82
       6.3.3 充電泵............................................................................86
       6.3.4 低通濾波器....................................................................87
       6.3.5 振盪器............................................................................88
6.4時脈資料回復電路模擬與討論..................................................89
6.4.1時脈資料回復電路模擬..................................................89
6.4.2時脈資料回復電路討論..................................................92

第七章結論...........................................................................................93
   7.1 總結...........................................................................................93
   7.2 未來展望...................................................................................94

參考文獻	95
作者簡介	99

                                

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