採用鋁、氮共掺雜的氧化鋅已被證實為製備p型氧化鋅中一種有效的方法使用。本實驗使用溶膠-凝膠法於藍寶石（0 0 0 1）基板上製備不同濃度鋁掺雜氧化鋅薄膜，並且於氨氣氣氛下退火以獲得鋁掺雜之含氮氧化鋅薄膜。所有的樣品皆利用X-ray繞射光譜、掃描式電子顯微鏡、光致螢光光譜、拉曼光譜以及霍爾效應測量儀檢測，以瞭解不同濃度鋁掺雜的影響。
XRD結果證實所有的樣品皆為六方晶系纖鋅礦結構，同時具有沿c軸（0 0 0 2）成長的擇優取向；（0 0 0 2）面的半高寬隨著掺雜濃度增加而提高這表示了有更多的鋁、氮雜質溶入氧化鋅中；表面形貌的觀察將透過SEM來進行。三種不同濃度之鋁掺雜含氮氧化鋅薄膜其PL顯示分別於3.32 eV、3.33 eV、 3.34 eV具有強烈的紫外線放射；這是由於鋁和氮的掺雜導致了能隙寬度的增加進而使得光譜於紫外線波段出現藍位移的現象，同時近能隙邊緣的光致螢光下降是由於導帶被自由載子充滿以及非幅射式的放射增加所致；同時光譜具有微弱的近紅外線放射，此微弱的近紅線放射是由於自由載子的再結合。
拉曼光譜中隨著Al_Zn^(3+)取代鋅原子位置的量增加其E2（low）聲子的波數也相對的提升。鋁和氮的掺雜導致了壓應力的產生使得E2（high）訊號的波數也往增加的方向移動，另外還可以觀察到三重的多重聲子訊號。霍爾效應量測顯示所有的樣品皆為p型氧化鋅薄膜，最高載子濃度為3莫耳％之鋁掺雜含氮氧化鋅薄膜的4.91×1018 cm-3， 2莫耳％之鋁掺雜含氮氧化鋅薄膜擁有最佳的載子遷移率59.0 cm2V-1s-1及最低電阻率0.034 Ω-cm。

A different approach for co-doping in ZnO using Al-N as dopant has been attempted to realize p-type ZnO. The effect of Al doped ZnO thin films were grown on sapphire (0 0 0 1) substrates using sol-gel method and annealing with ammonia ambient in order to obtained p-type Al doped ZnO:N thin films were subjected to X-ray diffraction (XRD), scanning electron microscopy (SEM), photoluminescence (PL), Raman spectroscopy and Hall measurements.
The XRD analysis reveals that all thin films have grown in the form of hexagonal Wurtzite structure with (0 0 0 2) preferential orientation. The FWHM of (0 0 0 2) peak increase till 3 mol % Al doped ZnO:N and increases for further addition of Al-N indicating incorporation of more impurities (dopants). Surface morphology of the films was analyzed using SEM. The PL spectra of three different concentration of p-type Al doped ZnO:N showed a strong UV emission band located at 3.32 eV, 3.33 eV, 3.34 eV respectively and a very weak infrared emission associated with free carrier recombination. Al an N incorporation induced a blue shift of optical band gap and quenching of the near-band-edge PL for thin film because of the band-filling effect of free carrier and nonradiative recombination.
In micro- Raman Scattering for doped ZnO film, An increase in the E2 (low) phonon wavenumber is ascribed to increased the Al_Zn^(3+) replaced on the Zn site and increase in the E2 (high) phonon wavenumber due to Al and N doped induced compressive stress. Multiple phonon behaviour was observed up to 3rd order. The electrical properties of Al doped ZnO:N thin films are p type, 3 mol% Al doped ZnO:N thin films with highest hole carrier concentration ~4.91×1018 cm-3, 2 mol% Al doped ZnO:N thin films with highest mobility ~59.0 cm2V-1s-1 and lowest resistivity 0.034 Ω-cm.

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