本論文主要探討利用微波加熱金屬，快速交聯其上方聚乙烯苯酚(PVP)閘極絕緣層之方法。首先，我們先在常壓下使用高瓦數微波方式交聯聚乙烯苯酚，發現可以做出有特性之元件。因此，我們發現微波應用在交聯聚乙烯苯酚製作有機薄膜電晶體的閘極絕緣層有很大的潛力。接著我們對微波壓力變化的影響做研究，結果降低壓力後微波效果較好。之後我們嘗試變化微波的功率及微波的時間來交聯PVP，發現以高瓦數微波交聯所做出的元件特性不好，且長時間的微波相較短時間微波的元件特性為差。經過FTIR及AFM等分析，發現在高瓦數及長時間的微波處理後PVP表面變得十分粗糙，推測是給予的微波能量過強，溫度太高超過PVP所能負荷所致。最後我們得到在壓力為2x10-2 torr、功率50 W、微波5分鐘為最佳的微波交聯PVP參數，並以此參數所做成的元件和傳統使用烤箱交聯PVP所做出之元件比較，結果顯示兩種交聯方法所做出之元件特性相當，而使用微波卻大大節省交聯所需時間，僅需烤箱的1/18，為使用微波之最大優勢。

This study focuses on the use of microwave heating of metal to rapidly cross-link Poly-4-vinylphenol (PVP). First, we cross-link PVP to form the gate insulator of OTFT by using high power microwave at atmospheric pressure; the OTFT can have general electrical characteristic. Hence, the microwave has potential to be applied to cross-link PVP to form the gate insulator of OTFT. Furthermore, we systematically optimized the parameters such as chamber pressure, microwave power, and heating time of microwave to fabricate the gate insulator with good electrical performance. We found that the OTFT has great electrical characteristics as we reduce chamber pressure; on the contrary, the OTFT has bad electrical characteristics as we raise either microwave power or heating time. Finally, we got that the optimized parameters were such as chamber pressure of 2x10-2 torr, microwave power of 50 W, and heating time of 5 min to fabricate the OTFT whose performance is comparable with that of OTFT using the PVP insulator baked by conventional oven for 90 min. Therefore, fabricating the PVP gate insulator of OTFT using microwave has the advantage of saving process time; it only requires one eighteenth of that using conventional oven.

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