本論文分為兩個部分，第一部分為使用旋轉塗佈PVP (Poly(4-vinylphenol))作為閘極絕緣層，為了找出PVP閘極絕緣層的最佳參數，我們改變PVP配製溶液的比例濃度、旋轉塗佈轉速以及加熱交聯溫度，最後發現，比例濃度為PGMEA：PVP：PMCF = 100：10：5.0 (wt%)，旋轉塗佈初轉速1000 rpm，時間20秒，末轉速4500 rpm，持續時間為40秒，放入烤箱以攝氏180度加熱交聯90分鐘所製作出的有機薄膜電晶體的電特性為最佳。
第二部分為在氧環境下微波加熱交聯PVP閘極絕緣層之有機薄膜電晶體，我們發現在20分鐘處理時間下，PVP無法充分地交聯，使閘極絕緣層中氫氧根含量較多，導致Ioff電流上升。而在80分鐘處理時間下，因加熱時間過長，使得PVP表面變的粗糙，使pentacene成長於閘極絕緣層表面無法有序排列，導致Ion下降。在處理時間為60分鐘有最佳的電特性，臨界電壓為-7.53 V、場效遷移率為1.281 cm^2/V-s、次臨界擺幅為0.842 V/dec.以及開關電流比為7.07E4。

This thesis is divided into two parts. The first part presents the spin-coated PVP (Poly(4-vinylphenol)) as gate insulator. In order to determine the superior parameter of PVP as the gate insulator, we modulate the various PVP to PMCF weight ratio, where PMCF is a cross-linking agent, different rotation speed of spin-coating and annealed temperature due to efficiently induce the cross-linking process between PVP and PMCF. Ultimately, the optimized parameter ,we got, for the ratio of concentration is PGMEA：PVP：PMCF = 100：10：5.0 (wt%), for the initial rotation speed of spin-coating is 1000 rpm for 20 s while the final one is 4500 rpm for 40s, and cross-linked in the vacuum oven at 180。C for 90 min.
In the second part, the scheme of microwave-induction heating (MIH) in oxygen ambient is utilized for the PVP layers cross-linked. However, after the treatment for 20 minutes, we observed that the reason of the increasing off current is there are excess hydroxyl groups in PVP dielectric layer caused by incompletely cross-linked PVP; while under the 80 minutes treatment, PVP surface morphology is turned to rough due to overheating. It make the pentacene grow on the surface disorderly which leads to descending of on current. We have shown that improve device characteristics demonstrate optimal treatment time, threshold voltage, field effect mobility, subthreshold swing and the on/off current ratio are 60 minutes, -7.53 V, 1.281 cm2/V-s, 0.824 V/decade and 7.07E4, respectively.

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