本論文主要研究B2O3-SiO2-BaO-ZnO玻璃與BaTi4O9微波介電陶瓷之低溫共燒行為，實驗中固定B2O3-SiO2-BaO含量，探討ZnO添加含量變化時，對整個材料系統之共燒行為產生的結果與對微觀結構及電氣特性之影響；實驗中，A,B,C,D四組玻璃配方均能降低燒結溫度，且經控制燒結條件後能有效抑制銅的擴散進而改善試片之變色問題，同時在這四組玻璃配方中找出可以維持基本品質因子(quality factor, Q)的高頻介電特性的目的之適當玻璃添加比例。
從X-ray繞射之相結構分析搭配電性分析可以發現維持BaTi4O9主體相有助於促使介電特性中之Qf值達到理想數值，Cu電極與BaTi4O9主體之Ti元素所組成之銅鈦氧化物(Cu3Ti3O)二次相因為能夠作為銅電極及陶瓷胚體的中間層，故能對界面間提供漸進的轉換進而促使微波介電特性中之Qf值獲得提昇，且燒結過程中ZnO會與B2O3產生液相以幫助燒結，同時於試片中生成Zn(BO2)2二次相，進而導致介電常數降低 。
當玻璃配方為A及B，並將BaTi4O9陶瓷主粉與此兩組玻璃混合，且添加比例均為4 wt%時，即B2O3 wt%實際添加量為8.256×10-3∼8.412×10-3 wt%，SiO2 wt%實際添加量為7.08×10-3∼7.216×10-3 wt%，BaOwt%實際添加量為1.5044×10-2∼1.5332×10-2 wt%，ZnO實際添加量為9.04×10-3∼9.62 ×10-3 wt% 之區塊內時，試片Qf值可提昇至5737.8∼5881.5，散逸因子亦可降低至0.00024∼0.000265，故可推論此兩組玻璃及其添加比例範圍能夠有效達到維持介電特性，故將此兩組玻璃在上述之配方範圍附近作微調整，以期能更進一步提昇高頻介電特性-Qf值；發現當B2O3wt%實際添加量為9.288×10-3∼1.15665×10-2 wt%，SiO2 wt%實際添加量為7.965×10-3∼9.922×10-3 wt%，BaOwt%實際添加量為7.965×10-3∼9.922×10-3 wt%，，ZnO實際添加量為1.08225×10-2∼1.243×10-2 wt%之區塊內時Qf值可提昇至6368(GHz)。

In the article, we investigate the sintering behavior, microstructures and electrical properties of low-temperature firable BaO-B2O3-SiO2-ZnO glass-added BaTi4O9 microwave dielectric materials with Cu paste in a reducing atmosphere. We fixed the BaO-B2O3-SiO2 content and varying the ZnO contents for studying the effect of glass compositions on the sintering behavior, microstructures and dielectric properties of low-temperature friable samples. The experiment results show that all of the four glass recipes A,B,C,D can not only reduce effectively sintering temperatures, but also improve the discoloring question of samples by restraining the diffusion of Cu-electrode during sintering process. According to the forgoing results, it is necessary to modify further the proportion of glass additions for obtaining better microwave dielectric properties, such as quality factor (Qf), at microwave frequency regime.
Base on the analysis results of X-ray diffractometry and electrical properties of the samples, it was found that the Qf value is high as the BaTi4O9 host phase has been maintained. Beside, the improved Qf value can be obtained due to the Cu3Ti3O phase, resulting from Cu reacts with Ti element of the BaTi4O9 ceramics, which existed and to be a interlayer between electrode and ceramics so that it can provide a gradual transformation zone to alleviate the structural transition and to promote the Qf value. Moreover, ZnO and B2O3 not only be a liquid phase promoter to give a assistance in sintering procedure but also form Zn(BO2)2 second phase to reduce dielectric constant.
With the glass recipes A and B, whose content range are B2O3: 8.256×10-3∼8.412×10-3 wt%, SiO2: 7.08×10-3∼7.216×10-3 wt%, BaO: 1.5044×10-2∼1.5332×10-2 wt%, ZnO: 9.04×10-3∼9.62×10-3 wt%, the Qf value of the samples can be improved to 5737.8∼5881.5, and the DF value can be also decreased to 0.00024∼0.000265. According to the forgoing results, it can be expected to modify further the proportion of glass addition for achieving a higher Qf value. Subsequently, it is find that when the compositions of glass addition are B2O3: 9.288×10-3∼1.15665×10-2 wt%, SiO2: 7.965×10-3∼9.922×10-3 wt%, BaO: 7.965×10-3∼9.922×10-3 wt%, ZnO: 1.08225×10-2∼1.243×10-2 wt%, the Qf value of the samples can be improved markedly to 6368(GHz).

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