本研究主要為兩個部分:第一部分使用DC磁控濺鍍法於室溫環境下，在玻璃基板與PC、PET、COC不同塑膠基板上沉積氧化銦錫薄膜，藉由量測分析探討不同基板上氧化銦錫之電氣與光學特性及薄膜組成與結構。第二部分使用DC磁控濺鍍法於室溫環境下，藉由改變不同的製程參數下，如氧流量與電漿功率作為實驗變數，在PET基板上沉積氧化銦錫薄膜，並且嘗試於室溫沈積溫度下製作出光電性能較佳的薄膜。發現以DC 磁控濺鍍法於室溫環境下沉積所得之薄膜電阻率隨著氧流量增加而增加，與濺鍍功率則無明顯之變化；而在PET基板沉積所得薄膜之銦原子分率，隨著氧流量與濺鍍功率的增加並無顯著的變化；而薄膜之錫原子分率隨著氧流量與濺鍍功率的增加亦無顯著的變化。顯示薄膜內元素組成比例接近。並於研究中獲得，當濺鍍功率為75W與氧流量0sccm沉積所得之ITO薄膜，具有最佳薄膜電阻率1.8×10-3 Ω-cm，可見光589nm波長下具有光學透過率81%，薄膜為(222)結晶面結構。

This thesis contains two sections. In the first section, ITO thin films on glass substrates and different plastic substrates of PC, PET, and COC were deposited by DC magnetron sputtering at room temperature. The electrical and optical properties, composition, and microstructure of these films were investigated. In the second section, the variations of properties with the oxygen flow rate and plasma output power for films coated on PET substrates were explored. The results showed that the electrical resistivity of ITO films increased with the increase in the oxygen content but it did not change with the plasma output power. The indium and tin contents in ITO films were also not functions of the oxygen content and the output power. All the deposited ITO films had close compositions even they were deposited at different conditions. The lowest electrical resistivity of 1.810-3 -cm was obtained for the ITO films deposited at plasma power of 75W and the oxygen flow rate of 0 sccm. This film had a optical transmittance of 81% under a visible light with a wavelength of 589 nm. This film also showed a (222) preferred growth plane.

[1]溫志中，「ITO透明導電膜之濺鍍技術展望」，工業材料雜誌，166期，第140-148頁(2000)。
[2]楊明輝，「ITO透明導電膜材料與成膜技術的新發展」，工業材料雜誌，189期，第161-174頁(2002)。
[3]曲喜新，楊邦朝，姜節儉，張懷武，「電子薄膜材料」，北京科學出版社，第93頁(1996)。
[4]李玉華，「透明導電膜及其應用」，科儀新知，第12卷，第一期，第94-102頁(1990)。
[5]楊明輝，「金屬氧化物透明導電材料的基本原理」，工業材料雜誌，179期，第133-144頁(2001)。
[6]楊志豪，「雙頻射頻持控磁控系統製備氧化銦錫薄膜摻雜錫，鈦及鉻之性質研究」，博士論文，國立成功大學 (2008)。
[7] John Wiley & Sons, “Plasma”, Glow Discharge Process, New York, Chap.3 (1980)
[8] B. Mayer, “Highly conductive and transparent films of tin and fluorine doped indium oxide produced by APCVD“ ,Thin Solid Films, Vol.221 pp. 166-182, (1992)
[9] 楊明輝，「觸控面板用透明導電膜材料」，工業材料雜誌，266期，第137-145頁(2009)。
[10]Gabriela .B. Gonzalez, Jerome B. Cohen, Jin-Ha Hwang, Thomas O. Mason, Journal of Applied Physics, 89,2550-2555,(2001)
[11]黃啟洲，「塑膠LCD」，化工資訊，11，pp.46 (2000)。
[12]F.Wu and B.S.Chiou, “Properties of Radio-Frequency Magnetron Sputtered ITO Films without In-Situ Substrate Heating and Post-Deposition Annealing“,Thin Solid Films,201,247,(1994)
[13] Ki Hyun Yoon,Ji-Won Choi ,Jappl.Phys.86,6451,(1999)
[14]A.Suzuki,T.Matsushita,T.Aoki,A.Mori,M.Okuda,“Highly conducting transparent indium tin oxide film prepared by pulsed laser deposition “ ,Thin Solid Films, Vol.411 pp.23-27,(2002)
[15] I.Hamberg,C.G. Granqvist,K.F. Berggren,B.E. Sernelius,L.Engstrom,“Bandgap widening in heavily doped oxide semiconductors used as transparent heat-reflectors“, Solar Energy Materials,12 pp.479-490,(1985)
[16] L.Gupta, A.Mansingh,P.K.Srivastava,“Band gap narrowing and the band structure of tin-doped indium oxide films”, Thin Solid Films, Vol.176 pp.33-44,(1989)
[17] H.R.Fallah,M.Ghasemi,A.Hassanzadeh,H.Steki,“The effect of annealing on structural, electrical and optical properties of nanostructured ITO films prepared by e-beam evaporation”, Materials Research Bulletin, 42 p.487-496,(2007)
[18]潘漢昌，蕭銘華，蘇健穎，蕭健男，科儀新知，第二十六卷第一期，(2004)。
[19] G.J.Exarhos,X.-D. Zhou, “Discovery-based design of transparent conducting oxide films”, Thin Solid Films,515 pp.7025-7052,(2007)
[20] J.M. Bennett, “Optical scattering and absorption losses at interfaces and in thin films”, Thin Solid Films, 123 pp. 27-44,(1985)
[21] H. K. Pulker,“Characterization of optical thin films”, Applied Optics, 18 , p.1969- 1977,(1979)
[22]Jin-Woo Parka,*, Gyeom Kim a, Seung-Ho Lee a, Eun-Hye Kim a, Geon-Hwan Lee b, Surface & Coatings Technology ,915–921,205,(2010)
[23] J. Andersons, S. Tarasovs, Y. Leterrier, Thin Solid Films, 517 ,(2009)
[24] Y.C. Lin , J.Y. Li, W.T. Yen, Applied Surface Science ,(2007)
[25] Young-gun Han a,*, Jung Hwan Lee a, Un-Jung Yeo a, Seok-Kyun Song a, Jin-Wook Sung ,Jun-Sik Cho , Seok-Keun Koh , Huynjoo Kim Current ,Applied Physics, 7,561–573, (2007)
[26] W.K. Choi, H.J. Jung, S.K. Koh, J. Vac. Sci. Technol. A 14 (2) 359, (1996)
[27] W.K. Choi, J.S. Cho, S.K. Song, H.J. Jung, S.K. Koh, Jpn. J. Appl.Phys.35,5820, (1996)
[28] W.K. Choi, S.K. Song, J.S. Cho, Y.S. Yoon, D. Choi, H.-J. Jung,S.K. Koh, Sens. Actuators, B 4021,(1997)
[29] J.S. Cho, W.K. Choi, K.H. Yoon, J. Cho, Y.S. Yoon, H.J. Jung, S.K. Koh, Mater. Res. Soc., Symp. Proc. 504 313. (1998)
[30] R. Bel Hadj Tahar, T. Ban, Y. Ohya, Y. Takahashi, J, Appl. Phys,83, 2631,(1998)
[31] Y. Han, D. Kim, J.S. Cho, S.K. Koh, J. Vac. Sci. Tehcnol. B 21 (1) 288, (2003)
[32] Y. Han, D. Kim, J.S. Cho, S.K. Koh, Thin Solid Films ,473,218,(2005)
[33] C.G. Choi, K. No, W.J. Lee, H.G. Kim, S.O. Jung, W.S. Kim,Thin Solid Films, 258,274,(1995)
[34]Ma Hongbin , Cho Jung-Soo , Park Chung-Hoo “A study of indiumtin oxide thin film deposited at low temperature using facing target sputtering system”, Surface and Coatings Technology ,153, 131- 137, (2002)
[35] H. Kim and C. M. Gilmore “Electrical, optical, and structural properties of ITO thin films for organic light-emitting devices”, Vol. 86, 11,p6451~6461,(1999)