電子封裝對電氣連接器端子之間距離的要求，已經到了傳統沖壓和塑模技術的極限。而以微機電的技術來製造連接器方能滿足如此嚴格的要求。因此，開發微機電連接器是有其必要性的。本論文的目的即是開發一可分離的微機電連接器，此連接器的端子所使用的材質為像黃銅、磷青銅和鈹銅之類的銅合金。銅合金的機械性質較純銅為佳，因此可容許端子有更多的撓度而不會產生永久變形。
由本研究可證明使用銅合金做為端子材質的微機電連接器是可以被製造出來的。於製作過程中發現，在蝕刻過程中，蝕刻溫度和KOH濃度會影響蝕刻深度及表面粗糙度:蝕刻溫度較高以及KOH濃度較低時所得到的蝕刻深度愈深; KOH濃度較高時所得的表面粗糙度愈好。濺鍍Ta薄膜時，時間和DC功率對薄膜成長有明顯的影響。而使用環氧樹脂進行接合時，溫度愈高所需要的接合的時間愈短。在蝕刻過程中，鈹銅合金端子加強光阻的保護有助於端子避免再被蝕刻，以保持連接器的完整性。

The requirement for the pitch of the contacts of an electrical connector is getting to a very small scale so that traditional stamping and injection molding techniques cannot be employed to make it. A MEMS connector, which is a connector made by using MEMS technology, will be able to meet such a stringent requirement. Therefore, to develop MEMS connectors is definitely necessary. The objective of this project is to develop a separable MEMS connector with copper alloy contacts. Copper alloys, such as brass and phosphor bronze and beryllium copper, have better mechanical properties than pure copper, so the contacts made of copper alloys can allow more deflection without permanent deformation.
It has been shown in the research that a MEMS connector with copper alloy contacts is feasible. During the manufacture processes, it is found that the etching temperature and the KOH concentration can greatly affect the etching rate and the surface roughness. The etching rate becomes higher when the etching temperature is raised and the KOH concentration is decreased. It is also found that the surface roughness can be improved when the KOH concentration is increased. As Ta being sputtering, both time and the DC power are significant factors for the Ta film growth. In the etching process, the copper alloy contacts need to be protected by the photoresist to prevent it from further etching. All the results are useful for fabricating a MEMS connector.

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