左圓之雙頻帶壓控振盪器與三頻帶壓控振盪器且頻率調變

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研究生：	蘇士翔 Shyh-Shyang Su
論文名稱：	左圓之雙頻帶壓控振盪器與三頻帶壓控振盪器且頻率調變 Design of Dual Band Left-Hand Circle Voltage-Controlled Oscillator and Triple Band Left-Hand Circle Voltage-Controlled Oscillator with Frequency Tuning
指導教授：	張勝良 Sheng-Lyang Jang 徐敬文 Ching-Wen Hsue
口試委員:	賴文政 Wen-Cheng Lai 黃進芳 Jhin-Fang Huang
學位類別：	碩士 Master
系所名稱：	電資學院 - 電子工程系 Department of Electronic and Computer Engineering
論文出版年：	2016
畢業學年度：	104
語文別：	英文
論文頁數：	146
中文關鍵詞：	雙頻帶壓控振盪器、三頻帶壓控振盪器、頻率調變、左圓
外文關鍵詞：	Frequency tuning
相關次數：	點閱：254 下載：3
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上一筆

在無線通訊傳輸系統中，本地的鎖相迴路與頻率合成器最為重要，而其中鎖相迴路與頻率合成器的核心部分－壓控振盪器最為重要。壓控振盪器的好壞會直接且嚴重的影響整個鎖相迴路或是頻率合成器的效能，其中壓控振盪器有幾個重要的性能指標，包含振盪頻率、功耗、相位雜訊、頻率調動範圍、以及晶片面積。在前三項的部分，有一個性能指標ＦｏＭ，我們通常看一個壓控振盪器的性能指標就可以整體性的知道這顆壓控振盪器的好壞。
首先，第一顆晶片，我們介紹一顆雙頻帶的左手壓控振盪器，在Cross-Couple MOS的Gate端接上ClassAC電路架構，Vtune設計在兩個共振腔之間。使用台積電180nm製程，工作頻率分別為4.256~4.367GHz與3.66GHz~3.726GHz，輸入電壓為0.9V下的功耗為5.238mW，晶片面積為0.642×1.063mm2，並且討論遲滯區域與偏壓的關係，將電路獨立操作Vc的變化與頻率調變關係，操作Vdd變化與頻率調變關係的範圍。

　　第二顆晶片，我們介紹一顆雙頻帶的左手壓控振盪器，在Cross-Couple MOS的Gate端接上ClassAC電路架構，Vtune設計在共振腔與Cross-Couple之間。使用台積電180nm製程，工作頻率分別為4.04~4.36GHz與6.09GHz~6.21GHz，輸入電壓為0.65V下的功耗為4.138mW，晶片面積為0.527×0.749mm2，並且討論頻率調變與偏壓的關係，將電路獨立操作Vc的變化與頻率調變關係，操作Vdd變化與頻率調變區的縮減，最後在頻率調變與Vt偏壓發現雙主頻的現象。

第三顆晶片，我們設計了一個由三個電感所組成的三頻帶左手壓控振盪器，Vtune1設計在L3與L2之間，而Vtune2設計在L1與Cross-Couple pair之間。三個震盪頻帶分別為4.27GHz~4.49GHz，6.98GHz~7.41GHz，5.28GHz~5.31GHz，輸入電壓為0.65V時的功耗為3.735mW,面積為0.568×1.189mm2，最後討論頻率調變與偏壓的影響，將電路獨立操作Vdd的變化與頻率調變區域關係，最後在遲滯區內的Vt偏壓發現雙主頻的現象。

In the wireless communication system, Phase-Locked Loop / Frequency synthesizer are the most important part in the Local part. In the PLL/Frequency synthesizer which Voltage-Controlled Oscillator is the most important unit. The performance of PLL/Frequency synthesizer are depend on VCO. Frequency , power consumption, phase noise are the reference of FoM (Figure of Merit). Frequency tuning range and chip size are another consideration for SoC (System on Chip). For the better performance of PLL/Frequency synthesizer, carefully designed VCO is needed.
In the first chip, we design a Left-Hand VCO with dual-band uses two inductors and set Vtune between L1 and L2. The architecture uses L1 with C1、C2 to form a resonator and L2 with C3、C4 to form another resonator. The proposed Dual-band VCO operates with 0.9 V supply voltage and fabricated in TSMC 0.18-µm CMOS process. The measured tuning range are 4.256~4.367GHz and 3.66~3.726GHz. Phase noise is -118.85 dBc/Hz at 1 MHz offset from 4.256 GHz. Power consumption is 5.238 mW. At last, we discuss about frequency tuning with Vc and Vdd. The whole chip size including pads is 0.642×1.063mm2.
In the second chip, we design a Left-Hand VCO with dual band using two inductors and set Vtune between L2 and Cross-Couple pair. The architecture uses L1 with C1、C2 to form a resonator and L2 with C3、C4 to form another resonator. The first band range is from 4.04GHz~4.36 GHz. The second band tuning range is from 6.09GHz~6.21GHz. The proposed Dual-band VCO operates with 0.65 V supply voltage and fabricated in TSMC 0.18-µm CMOS process. Power consumption is 4.138mW . At last, we discuss about frequency tuning with Vc and Vdd. For the specific Vt in Hysteresis, we have dual tones at different resonance frequencies in full span spectrum. Whole chip size including pads is 0.527×0.749mm2.
In the third chip, we proposes a Triple-band Left-Hand VCO. We use three inductors and three pair capacitors to form three resonators to generator triple-band frequency signals. We set Vtune1 between L2 with L3 and Vtune2 between L1 with a Cross-Coupled MOS pair. The measured first band frequency is from 4.27GHz~4.49GHz . Second band frequency is from 6.98GHz~7.41GHz . Third band frequency is from 4.27GHz ~ 4.49GHz.The power consumption is 3.735mW. This chip is implement in TSMC 0.18 μm 1P6M CMOS process. At last, We discuss about frequency tuning with Vc and Vdd. For the specific Vt in hysteresis, we have dual tones at different resonance frequencies in full span spectrum. The chip size including pads is 0.568 × 1.189 mm2.

中文摘要	I
ABSTRACT	III
TABLE OF CONTENTS	VI
LIST OF FIGURES	VIII
LIST OF TABLES	XIV
CHAPTER 1 INTRODUCTION	1
1	MOTIVATION AND BACKGROUND	1
CHAPTER 2 OVERVIEW OF THE VOLTAGE-CONTROLLED OSCILLATORS	8
1 INTRODUCTION	8
2 BASIC THEORY OF OSCILLATORS	9
2.1 One-Port (Negative Resistance) View	10
2.2 Two-Port (Feedback) View	14
3 THE CLASSIFICATION OF OSCILLATORS	17
3.1 Ring Oscillator	17
3.2 LC-Tank Oscillator	19
3.3 Research of RLC Tank	24
3.4 Type of LC Oscillator	27
3.4.1 Single Transistor Oscillator	28
3.4.2 Cross-Coupled Oscillator	34
3.4.3 One-Port Oscillator (Negative-Gm Oscillator)	37
3.4.4 Complementary Cross-Ccouple Topology	39
3.4.5 Quadrature Voltage-Controlled Oscillator	41
CHAPTER 3 BASIC CONCEPT OF VOLTAGE-CONTROLLED OSCILLATOR DESIGN	46
1 DESIGN PARAMETER OF VOLTAGE-CONTROLLED OSCILLATOR	46
2 SIGNIFICANT ISSUE OF VOLTAGE-CONTROLLED OSCILLATOR	49
2.1 Definition of Phase Noise	49
2.2 Linear Time-Invariant (LTI) Phase Noise Model	51
2.3 Linear Time-Variant Phase Noise Model	55
2.4 Classification of Noise	57
2.4.1 Thermal Noise	58
2.4.2 Flicker Noise	60
2.4.3 Phase Noise in Communications	61
2.5 Quality Factor	63
3 ELEMENTS OF SEMICONDUCTOR PROCESS	65
3.1 Resistor	65
3.2 Inductor	66
3.3 Transformer	75
3.3.1 Planar Transformer	78
3.3.2 Stacked Transformer	79
3.4 Capacitor	80
3.5 Varactor Design	83
3.5.1 P-N Reverse Biased Diode	84
CHAPTER 4 LOW PHASE NOISE CLASS-C DUAL-BAND VOLTAGE-CONTROLLED OSCILLATOR WITH LEFT-HANDED RESONATOR	88
1 INTRODUCTION	88
2 CIRCUIT DESIGN	89
3 MEASUREMENT RESULTS	90
CHAPTER 5 LOW POWER CLASS-C DUAL-BAND VOLTAGE-CONTROLLED OSCILLATOR WITH LEFT-HANDED RESONATOR	97
1 INTRODUCTION	97
2 CIRCUIT DESIGN	98
3 MEASUREMENT RESULTS	98
CHAPTER 6 TRIPLE-BAND VOLTAGE-CONTROLLED OSCILLATOR USING LEFT-HAND RESONATOR	105
1 INTRODUCTION	105
2 CIRCUIT DESIGN	107
3 MEASUREMENT RESULTS	109
CHAPTER 7 CONCLUSION	119
REFERENCES	121

                                

[1] B. Razavi, RF Microelectronics, Prentice Hall PTR, 1998.
[2] S. Smith, “Microelectronic Circuit 4th edition” , Oxford University Press 1998.
[3] J. Roggers, C. Plett, “Radio frequency integrated circuit design”, Artech House, 2003.
[4] N. M. Nguyen and R. G. Meyer, “Start-up and frequency stability in high-frequency oscillators”, IEEE J. Solid-State Circuit, vol. 27, no. 5, pp. 810-820, May 1992.
[5] B. Razavi, “Design of Integrated Circuits for Optical Communications”, Mc Graw Hill.
[6] S. J. Lee, B. Kim, K. Lee, “A Novel High-Speed Ring Oscillator for Multiphase Clock Generation Using Negative Skewed Delay Scheme”, IEEE Journal of Solid-State Circuits, vol. 32, No. 2, February 1997.
[7] G. Gonzalez, “Microwave Transistor Amplifiers Analysis and Design”, Prentice Hall, 1997.
[8] S. H. Lee, S. L. Jang, “Implementation of New High Frequency CMOS VCOs and Injection-Locked Frequency Dividers”, April 2007.
[9] J. Aguilera, and R. Berenguer, “Design and test of integrated inductors for RF applications”, Kluwer Academic Publishers, 2004.
[10] B. De Muer, M. Borremans, M. Steyaert, and G. Li. Puma, “A 2GHz low-phase-noise integrated LC-VCO set with flicker-noise upconversion minimization”, IEEE J. Solid-State Circuits, vol. 35, pp. 1034-1038, 2000.
[11] S.Levantino, C. Samori, A. Bonfanti, S. L. J. Gierkink, A. L. Lacaita, and V. Boccuzzi, “Frequency Dependence on Bias Current in 5GHz CMOS VCOs:impact on tuning range and flicker noise upconversion”, IEEE J. Solid-State Circuits, vol. 37, pp. 1001-1003, 2002.
[12] T. H. Lee, “The Design of CMOS Radio Frequency Integrated Circuits”, Cambridge University Press, 1998.
[13] J. Craninckx and M. S. J. Steyaert, “A 1.8 GHz low-phase-noise CMOS VCO using optimized hollow spiral inductors,” IEEE J. Solid-State Circuits, vol. 32, no. 5, pp. 736–744, May 1997.
[14] J. J. Kim, B. Kim, “A low-phase-noise CMOS LC oscillators with a Ring Structure,” ISSCC Digest of Technical Papers, pp. 430-431, Feb. 2000.
[15] J. Savoj, B. Razavi, High-Speed CMOS Circuits For Optical Receivers, Kluwer Academic Publishers, 2001.
[16] A. Rofougaran, J. Rael, M. Rofougaran, and A. Abidi, “A 900 MHz CMOS LC-oscillator with quadrature outputs,” in IEEE ISSCC Dig. Tech. Papers, pp. 392-393, Feb. 1996.
[17] T. Lee, and A. Hajimiri, “Oscillator phase noise: a tutorial,” IEEE J. Solid-State Circuits, vol. 35, no. 3, pp. 326-336, Mar. 2000.
[18] D. Leeson, “A simple model of feedback oscillator noise spectrum,” Proceedings of the IEEE, vol. 54, pp. 329–330, Feb. 1966.
[19] A. Hajimiri and T. H. Lee, “A general theory of phase noise in electrical oscillators,” IEEE J. Solid-State Circuits, vol. 33, no. 2, pp. 179–194, Feb. 1998.
[20] A. Zolfaghari, A. Chan, and B. Razavi, “Stacked inductors and transformers in CMOS technology,” IEEE J. Solid-State Circuits, vol. 36, no. 4, pp. 620-628, April 2001.
[21] C. P. Yue, C. Ryu, JackLau, T. H. Lee, and S. Wong, “A physical model for planar spiral inductors on silicon,” 1996 International Electron Devices Meeting Technical Digest, pp. 155–158, Dec. 1996
[22] A. Hajimiri, and T. H. Lee, “Design Issues in CMOS differential LC Oscillators,” IEEE J. Solid-State Circuits, vol. 34, no. 5, pp. 717–724, May 1999.
[23] A. Hajimiri and T. H. Lee, The Design of Low Noise Oscillators, Springer 1999.
[24] J. R. Long, “Monolithic transformers for silicon RF IC design,” IEEE Journal of Solid-State Circuits, vol. 35, pp. 1368-1382, Sep. 2000.
[25] Marc Tiebout, Low Power VCO Design in CMOS, Springer 2009.
[26] Y.-H. Chuang, S.-L. Jang, S.-H. Lee, R.-H. Yen and J.-J.Jhao, “5-GHz low power current-reused balanced CMOS differential Armstrong VCOs,” IEEE Microw. Wireless Compon. Lett., vol. 17, no.2, pp. 139-141, Feb. 2007.
[27] S.-L. Jang, Y.-J. Song and C.-C. Liu, “A differential Clapp VCO in 0.13μm CMOS technology,” IEEE Microw. Wireless Compon. Lett., vol. 19, no. 6, pp. 404–406, Jun. 2009.
[28] S.-L. Jang, C.-C. Liu, Y.-J. Song and M.-H. Juang, “A low voltage balanced Clapp VCO in 0.13 μm CMOS Technology,” Microwave and optical technology Lett., vol. 52, no. 7, pp. 1623–1625, July 2010.
[29] S.-H. Li, S.-L. Jang, Y.-S. Chuang and C.-F. Li, “A new LC-tank voltage controlled oscillator,” in IEEE Asia-Pacific Cir. Syst. Conf., pp. 425–427, Dec. 2004.
[30] S.-L. Jang, C.-Y. Wu, C.-C. Liu, and M.-H. Juang, “A 5.6GHz low power balanced VCO in 0.18 μm CMOS,” IEEE Microw. Wireless Compon. Lett., vol. 19, no. 4, pp. 233-235, April 2009.
[31] P. Kinget, “A fully integrated 2.7V 0.35 μm CMOS VCO for 5GHz Wireless Applications,” in Proc. ISSCC, pp. 226-227, 1998.
[32] Y.-B. Choi, T.-H. Teo, and H. Liao, “Symmetrical spiral inductor design and optimization for VCO design in 0.35 μm CMOS technology,” in Proc IEEE Int. Conf. ASIC, vol. 2, pp. 1066–1069, 2003.
[33] T. P. Liu, “A 6.5 GHz monolithic CMOS voltage-controlled oscillator,” in Proc. ISSCC, pp. 404-405, 1999.
[34] C. Lam and B. Razavi, “A 2.6-GHz/5.2-GHz CMOS voltage-controlled oscillator,” in Proc. ISSCC, pp. 402-403, 1999.
[35] C.-Y. Cha and S.-G. Lee “A complementary Colpitts oscillator in CMOS technology,” IEEE Trans. Microw. Theory Tech., vol. 53, no. 3, pp. 881-887, Mar. 2005.
[36] T. N. Nguyen and J.-W. Lee, “Low phase noise differential vackar VCO in 0.18 μm CMOS technology,” IEEE Microwave Wireless Compon. Lett., vol. 20, no 2, pp. 88-90, Feb. 2010.
[37] J. Park, J. Park, Y. Choi, K. Sim, and D. Baek, “A fully-differential complementary Hartley VCO in 0.18 μm CMOS technology,” IEEE Microwave Wireless Compon. Lett., vol. 20, no 2, pp. 91-93, Feb. 2010
[38] S.-L. Jang, W.-C. Liu, C.-W. Chang and J.-F. Huang, “A 0.35 μm CMOS cross-coupled complementary Colpitts voltage controlled oscillator,” Microwave and Optical Technology Lett., vol. 53, no. 9, pp. 2189-2192, Sep. 2011.
[39] A. Kral, F. Behbahani, and A. A. Abidi, “RF-CMOS oscillators with switched tuning,” in Proc. IEEE Custom Integrated. Circuits Conf., pp. 555–558, Sep. 1998.
[40] J. Kim, J. Shin, S. Kim, and H. Shin, “A wide-band CMOS LC VCO with linearized coarse tuning characteristics,” IEEE Trans. Circuits Syst. II, Exp. Briefs, vol. 55, no. 5, pp. 399–430, May 2008.
[41] M. Tiebout, “A CMOS fully integrated 1 GHz and 2 GHz dual-band VCO with a voltage controlled inductor,” in Proc. Eur. Solid-State Circuits Conf. (ESSCIRC), Florence, Italy, pp. 799–802, Sep. 2002.
[42] C. F. Chang, and T. Itoh, “A dual-band millimeter-Wave CMOS oscillator with left-handed resonator,” IEEE Trans. Microw.Theory Tech., vol. 58, no. 5, pp. 1401–1409, May 2010.
[43] S.-L. Jang, H.-H. Lin and C.-W. Hsue,” Mode-switching left-handed standing wave voltage-controlled oscillator,”Microw. Opt. Technol. Lett. vol.55, 9,pp. 1977–2244, Sept. 2013.
[44] S.-L. Jang,, W.-H. Lee, and C.-W. Hsue, ” Fully-integrated standing wave oscillator using composite right/left-handed LC network,” Microw. Opt. Technol. Lett.., vol. 55, 5,pp.985-988, May. 2013.
[45] M. Tohidian, A. Fotowat-Ahmadi, M. Kamarei,and F. Ndagijimana, “High-swing class-C VCO,”in ESSCIRC (ESSCIRC), 2011 Proceedings of the,Sept. 2011, pp. 495 –498.
[46] J. Chen, F. Jonsson, M. Carlsson, C. Hedenas, and L.-R. Zheng, “A low power, startup ensured and constant amplitude Class-C VCO in 0.18um CMOS,” IEEE Microw. Wireless Compon. Lett.,vol. 21, no. 8, pp. 427 –429, Aug. 2011.
[47] S.-L. Jang, Y.-K. Wu, C.-C. Liu and J.-F. Huang,” A dual-band CMOS voltage-controlled oscillator implemented with dual-resonance LC tank,”IEEE Microw. Wireless Compon. Lett., vol. 19, No. 12, pp.816-818, Dec. 2009.
[48] S.-L. Liu, K.-H. Chen, and A. Chin, “A dual-resonant mode 10/22-GHz VCO with a novel inductive switching approach,” IEEE Trans. Microw.Theory Tech., vol. 60, pp. 2165–2177, Jul. 2012.
[49] L. Jia, J. G. Ma, K. S. Yeo, M. A. Do, X. P. Yu, and W. M Lim, “A 1.8-V 2.4/5.15-GHz dual-band LC VCO in 0.18 μm CMOS technology,” IEEE Microw. Wireless Compon. Lett., Vol. 16, pp. 194-196, Apr. 2006.
[50] A. Hajimiri and T. Lee, “Design issues in CMOS differential LC oscillators,” IEEE J. Solid-State Circuits, vol. 34, no. 5, pp. 717-724, May 1999.
[51] P. Andreani, X. Wang, L. Vandy, and A. Frad, “A study of phase noise in Colpitts and LC-tank CMOS oscillators,” IEEE J. Solid-State Circuits, vol. 40, no. 5, pp. 1107-1118, May. 2005.
[52] S.-L. Jang, S. Jain, J.-F. Huang, and C.-W. Hsue ” DC-bias and oscillation-amplitude dependent frequency-tuning characteristics of varactor-switching dual-band CMOS VCOs,” vol. 55, No. 6, pp. 1389-1393, Microw. Opt. Technol. Lett., 2013.
[53] S.-L. Jang, Y.-J. Song, and C.-C. Liu, ” A differential Clapp VCO in 0.13µm CMOS technology,” IEEE Microw. Wireless Compon. Lett., pp. 404-406, June, 2009.
[54] S.-L. Jang, Y.-K. Wu, C.-C. Liu and J.-F. Huang, ” A dual-band CMOS voltage-controlled oscillator implemented with dual-resonance LC tank,” IEEE Microw. Wireless Compon. Lett., vol. 19, No. 12, pp.816-818, Dec. 2009.
[55] C. F. Chang, and T. Itoh, “A dual-band millimeter-Wave CMOS oscillator with left-handed resonator,” IEEE Trans. Microw. Theory Tech., vol. 58, no. 5, pp. 1401–1409, May 2010.
[56] M. Tohidian, A. Fotowat-Ahmadi, M. Kamarei,and F. Ndagijimana, “High-swing class-C VCO,” in ESSCIRC (ESSCIRC), 2011 Proceedings of the, Sept. 2011, pp. 495 –498.
[57] D. Ham and A. Hajimiri, “Concepts and methods in optimization of integrated LC VCOs,” IEEE J. Solid-State Circuits, vol. 36, no. 6, pp. 896-909, Jun. 2001.
[58] X. Li, S. Shekhar, and D. J. Allstot, “Gm-boosted common-gate LNA and differential Colpitts VCO/QVCO in 0.18-μm CMOS,” IEEE J. Solid-State Circuits, vol. 40, no. 12, pp. 2609–2619, Dec. 2005.
[59] J.-A. Hou and Y.-H. Wang, “A 5 GHz differential Colpitts CMOS VCO using the bottom PMOS cross-coupled current source,” IEEE Microw. Wireless Compon. Lett., vol. 19, no. 6, pp. 401–403, Nov. 2009.
[60] J.-P. Hong and S.-G. Lee, “Low phase noise Gm-boosted differential gate-to-source feedback Colpitts CMOS VCO,” IEEE J. Solid-State Circuits, vol. 44, no. 11, pp. 3079–3091, June 2009.
[61] J. Park, J. Park, Y. Choi, K. Sim and D. Baek, “A fully differential complementary Hartley VCO in 0.18μm CMOS technology”, IEEE Microw. Wireless Compon. Lett., vol. 20. no. 2, pp. 91–93, Feb. 2010.
[62] S. Kim, and H. Shin, “A 2.3-GHz sub-mW current-reuse CMOS VCO for wireless sensor node applications,” IEICE Trans. Electron., Vol.E95–C, pp.968-971, May 2012.
[63] J. Chen, F. Jonsson, M. Carlsson, C. Hedenas, and L.-R. Zheng, “A low power, startup ensured and constant amplitude Class-C VCO in 0.18um CMOS,” IEEE Microw. Wireless Compon. Lett., vol. 21, no. 8, pp. 427 –429, Aug. 2011.
[64] N. Buadana and E. Socher, “A triple band travelling wave VCO using digitally controlled artificial dielectric transmission lines,” IEEE Radio Frequency Integrated Circuits Conference (RFIC 2011), June 2011, Baltimore.
[65] Y. Itoh and S. Tanaka, “A triple-band SiGe HBT differential VCO using a reconfigurable multi-band resonator”, Proceeding of the 40th European Microwave Conf. pp. 456-459, Sept. 2010.
[66] S.-L. Jang, Y.-T. Chen, C.-W. Chang and M.-H. Juang, ” Triple-band CMOS voltage-controlled oscillator,” Microw. Opt. Technol. Lett.., vol. 55, 4, pp.737-740, April. 2013.
[67] S.-L. Jang, W.-H. Lee, and C.-W. Hsue, ” Fully-integrated standing wave oscillator using composite right/left-handed LC network,” Microw. Opt. Technol. Lett., vol. 55, 5, pp.985-988, May. 2013.
[68] S.-L. Jang, H.-H. Lin and C.-W. Hsue,” Mode-switching left-handed standing wave voltage-controlled oscillator,” Microw. Opt. Technol. Lett. vol. 55, 9, pp. 1977–2244, Sept. 2013.

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