本論文研究為在常溫常壓下，使用二氧化鈦對低濃度之三氟化氮氣體進行真空紫外光光催化降解之反應，改變不同反應參數，真空紫外光燈源對三氟化氮氣體之反應、對三氟化氮氣體之反應初始濃度、觸媒量、觸媒照光面積、觸媒表面形態、粒徑及表面積、氧氣分率與溼度等變因，以power law模式，對反應進行動力式之推導及驗證。
在真空紫外光光源部分，可直接將三氟化氮氣體光解。藉由且二氧化鈦觸媒在不同塗佈量、不同照光面積與不同溫度下產生之二氧化鈦觸媒表面形態、粒徑及表面積等參數，得知二氧化鈦觸媒對三氟化氮氣體不具有吸附性。並得知此反應程序為一級反應。以此反應程序來發展分析氣相中三氟化氮氣體，利用不同光降解反應結果，以傅立葉紅外線光譜儀與離子層析儀分別分析三氟化氮氣體濃度之變化與生成物。

In this work, the photolytic degradation of gaseous nitrogen triflouride under VUV (vacuum ultraviolet) illumination in a batch reator was investigation in detail, including reaction kinetics and quantification of gaseous nitrogen triflouride.
In first part, the effect of VUV illumination without TiO2, concentration of nitrogen triflouride, amount of TiO2, area illumination of VUV, morphology and crystallite size of TiO2, oxygen concentration and relative humidity on photolytic reaction rate were studied for derivation of kinetic model. A rational reaction mechanism was satisfactorily developed by using power law model and batch design equation. According to the experimental results, the reaction behavior obeys first-order reaction.
The energy of VUV light was strong enough for the degration of gaseous nitrogen triflouride. However, nitrogen triflouride would not be adsorbed on the TiO2 surface, resulting in the low photocatalytic reaction rate. The products of photolytic degradation of gaseous nitrogen triflouride was respectively determined by fourier transform infrared spectroscopy and ionic chromatography.

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