本論文的研究方向主要在探討液晶與聚醯亞胺（Polyimide；簡稱PI)配向膜之配向摩擦（Rubbing）加工參數及針對上、下PI配向膜配向方向不同組成液晶盒（CELL）後之光電特性，以了解PI受配向布壓入量不同之表面型態變化和配向膜配向方向不同組成CELL後其液晶紋理圖、預傾角及電壓與穿透率(V-T)圖等光電性質。
實驗上使用原子力顯微鏡（Atomic Force Microscope；簡稱AFM），觀察未配向及經配向布壓入量為3mm、4mm摩擦配向後之表面型態，並使用偏光顯微鏡（Polarizing Microscope；簡稱POM）；任意波形產生器（Arbitrary Waveform Generator；簡稱 AWG）及高速電力增幅器，觀察未配向和不同配向方向為交叉0°（↑↑）以及交叉90°（↗↖）組合成的Cell，在印加電壓0~10V下之液晶紋理圖及電壓與穿透率之關係圖做分析探討。再使用預傾角量測儀（(LCD PROPERTIES EVALUATION DEVECE OMS-CP3）量測上述之Cell預傾角。
實驗結果顯示，當配向布壓入量愈大時，PI表面刷痕愈明顯粗糙度愈高，且預傾角較未配向前大。而在未配向時的液晶紋理圖呈現雜亂現象；在配向為Rubbing交叉90°（↗↖）時其色彩鮮明；在配向為Rubbing交叉0°（↑↑）時其色彩灰暗。另外，在電壓與穿透率之關係圖可得知配向為Rubbing交叉90°（↗↖）時，其試片所要達到最大穿透率所需驅動電壓較小。而在配向為Rubbing交叉0°（↑↑）時，其所需驅動電壓較大且曲線呈現較不穩定狀態。當在未配向時，所需驅動電壓更大，且呈現更不穩定狀態。最後在預傾角的量測可知未配向之樣品預傾角平均為3.010°，而配向為Rubbing交叉90°（↗↖）其預傾角平均為3.899°，當配向為Rubbing交叉0°（↑↑）時平均為5.895°，且數值為跳躍式不穩定。

The research direction of this article is to study the rubbing processing parameter of liquid crystal and Polyimide(PI) rubbing film .Besides, it also studies the photoelectric characteristics of the liquid crystal cell, which is formed from the upper and lower homogeneous alignment of PI-type rubbing membrane with different rubbing direction. With these researches, the change of the superficial attitudes of the rubbing depth of homogeneous alignment, the liquid crystal grain map of the cell formed by different direction of rubbing membrane, and the photoelectric characteristics of the pretilt angle and Voltage-Transmittance (V-T) can be understood.

In the experiment, the Atomic Force Microscope (AFM) is used to observe the superficial attitudes which is not rubbed, and those rubbed by the rubbing depth of 3mm and 4mm. Besides, the Polarizing Optical Microscope (POM), Arbitrary Waveform Generator (AWG) and Hight Speed Powre Amplifier to observe the cell which is not rubber, and those combined by rubbing direction with intersection of 0°（↑↑）and 90°（↗↖）. The relationships between liquid crystal grain map and the transmittance under 0-10V of impressing voltage will be analyzed. Then the LCD Properties Evaluation Devece OMS-CP3 is used to measure the pretilt angle of cell mentioned above.

The experimental result shows that when the rubbing depth is large, the surface brushing mark of PI is more obvious and the roughness is higher. Besides, the pretilt angle is greater than the one that is not rubbed. Before it is rubbed, the liquid crystal phase map appears as random. When the intersection is 90°（↗↖）, the color is bright. When the intersection is 0°（↑↑）,the color is gloomy. Furthermore, from the relationship between the voltage-Transmittance and the rate of penetration, it is found that when the intersection of rubbing is 90°（↗↖）,the driving voltage needed for the testing wafer to achieve the highest transmittance is relatively low. When the intersection of rubbing is 0°（↑↑）, the driving voltage needed is higher and the curve appears unstable. When it is not rubbed, the driving voltage needed is even higher and it appears even more unstable. Finally, from the measurement of pretilt angle, it is found that the average pretilt angle of the samples, which are not rubbed, is 3.010°. When the intersection of rubbing is 90°（↗↖）, the average pretilt angle is 3.899°. When the intersection of rubbing is 0°（↑↑）, the average pretilt angle is 5.895°, and the value hops and is unstable.

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