本論文設計以及製作不同中心波長之具電致吸收調變布拉格反射鏡之可調雷射，以InGaAsP作為主動層材料，並將光致發光(Photoluminescence, PL)波長設計在1577 nm的位置，透過對接再磊晶製程在被動區成長AlInGaAs材料系統之量子井結構，為降低吸收效應，將電致吸收量子井的光致發光波長設計於1477 nm的位置。
本研究製作三種中心波長1530 nm、1550 nm與1570 nm之雷射並比較其特性。由於最接近主動層量子井的光致發光波長，波長在1570 nm之雷射擁有最佳斜率效率以及最大的輸出光功率，功率可達8.305 mA，斜率效率為0.1194 (W/A)。 波長調製方面，波長1570 nm之雷射擁有最大的調動範圍，將增益區電流固定於50 mA時，在正電流注入下可往短波長調動4 nm，在施加負偏壓時波長可往長波長調動4.1 nm。波長1550 nm之雷射，在正電流注入下往短波長調動3 nm，而施加負偏壓時波長往長波長調動2 nm。波長1530 nm之雷射，在正電流注入下往短波長調動1.92 nm，而施加負偏壓時波長往長波長調動2.16 nm。波長調製範圍有因主被動區的串聯電阻偏大而受限。在調動過程中，除模態轉換間，旁模抑制比皆可以超過30 dB。為增加光功率以達穩定輸出，本論文在雷射末端設計半導體光放大器，在增益區電流固定於20 mA下，注入SOA之電流為100 mA時有最大光功率增益，功率輸出總共提升4.04 dB。

This thesis aims to develop wavelength tunable lasers with electroabsorption modulation (EAM) based distributed Bragg reflector (DBR). The multiple-quantum-well (MQW) laser active region employs InGaAsP material system. The photoluminescence (PL) wavelength of the MQWs is 1577 nm. Then the AlInGaAs of MQW based EAM material with a PL wavelength of 1477 nm was butt-jointed with the laser active layer for using as the phase-shift and Bragg-reflector regions. We designed and compare the characteristics of tunable DBR lasers with different center wavelengths of 1530 nm, 1550 nm and 1570 nm.
Because the lasing wavelength is near the PL peak wavelength of the MQW active section, the 1570 nm laser has the best slope efficiency and the maximum output optical power. In terms of wavelength tuning, the 1570 nm laser also has the best tuning characteristics when both applying forward bias and reverse bias on DBR section. The sidemode suppression ratio (SMSR) can maintain at over 30 dB except at the wavelength tuning transitions, but the tuning range was limited due to the large series resistance at both active and passive sections. In order to increase the optical power to achieve stable output, the semiconductor optical amplifier (SOA) is designed and placed at the output end of the laser. When a current is applied to the laser gain section is fixed at 20 mA, the power output is increased by 4.04 dB while the current of SOA is 100 mA.

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