本論文包含兩項獨立研究主題。
第一項研究為「太赫茲成像系統之功率分配網路與D頻帶波導與基板整合波導轉接之系統整合」，吾人採用日月光所提供之先進IC載板製程，在D頻帶完成1分4、1分16、1分64相等振幅、同相位之功率分配網路，作為饋入太赫茲成像系統解算晶片陣列的高頻參考訊號。同時也完成D頻帶WR-06波導與基板整合波導轉接之設計，實現將太赫茲頻率的高頻訊號經由D頻帶WR-06波導，將電磁能量透過孔徑耦合貼片天線耦合至印刷電路板內，成功將太赫茲訊號饋入至印刷電路板，使高頻訊號可在平面電路傳輸，解決太赫茲頻帶訊號皆由波導作為傳輸介面之饋入問題，最終整合上述二者設計，完成太赫茲成像系統功率分配網路之系統設計。
第二項研究為「Ka頻帶左右手相位可調合成傳輸線砷化鎵晶片之實現」，吾人使用臺灣半導體研究中心(TSRI)所提供之穩懋砷化鎵0.15-um pHEMT製程，使用砷化鎵贗高電子遷移率電晶體(Pseudomorphic High Electron Mobility Transistor, pHEMT)，作為一高品質因子且寬電容可調範圍之變容器，取代相位可調合成傳輸線左手(T型)、右手(π形)網路原本的集總式固定電容值，藉由調控變容器之偏壓而改變其電容值，進而使整體左、右手產生漸進相位量，在兩狀態下達到特定相位差，實現1位元相移器之應用，並藉由高阻值低耗損的砷化鎵基板特性，在Ka頻帶完成寬頻、低耗損、相位連續可調左、右手相位可調合成傳輸線之晶片化設計。

This thesis consists of two independent researches.
The first part is power distributed network of the terahertz imaging system and the system integration design of the D-band waveguide transition. We use the advanced IC substrate process provided by ASE to realize the design of equal amplitude and in phase power distributed network of 1 to 4, 1 to 16, 1 to 64 at D band, which acts as a high frequency reference signal for the chip of the terahertz imaging system. Meanwhile, I also completed the transition from D-band WR-06 waveguide to substrate integrated waveguide on the printed circuit board. The high frequency signal of the terahertz frequency provided by D-band WR-06 waveguide was successfully coupled to the substrate integrated waveguide through aperture coupled patch antenna as key coupled element. It solves the problem of the terahertz band waveguide as the transmission interface so that the signal can be transmitted in the planar circuit. Finally, I integrated the above two designs to complete the power distributed network of the terahertz imaging system design.
The second research is the GaAs chip realization of Ka-band left / right handed phase tunable synthesized transmission line. I used the GaAs 0.15-um pHEMT process provided by the National Semiconductor Research Center (TSRI) to fulfill the design. I used GaAs Pseudomorphic High Electron Mobility Transistor (pHEMT) as a varactor, which has high quality factor and wide capacitance tuning range to replace the original capacitor of left-handed (T-network) and right-handed (π-newtwork) networks of phase tunable synthesized transmission line. By tuning the bias voltage of the varactor to change the capacitance value so that the overall phase response of left and right handed network could generate progressive phase shift to fulfill the 1-bit phase shifter. Finally, I completed a continuously tunable left / right handed phase tunable synthesized transmission line with a return loss greater than 20 dB, an insertion loss less than 1.5 dB by using the excellent low loss property of GaAs substrate.

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