相較於功率金屬氧化物半導體場效電晶體與功率穿隧型場效電晶體，功率橫向絕緣閘極雙極性電晶體已經被提出在同樣耐壓下擁有較低的導通阻抗。原因為藉由穿隧電流導通元件的PN接面(P+-anode/n-drift)，進而有效的降低漂移區的串聯電阻。在本論文中，探討了不同閘極位置對於平面式穿隧型場效應結構之絕緣閘極雙極性電晶體電性的影響，而其接面(P+-cathode/n-drift)電場與漂移區電場有著互相權衡的關係。此外，其元件的結構移除P型井與形成N型口袋會大幅提高帶對帶穿隧，使得導通電流明顯提升，然而空乏區的電場過大會導致耐壓能力衰退，所以最佳化其元件的特性則需要互相權衡導通電流與耐壓能力。
為了提升耐壓能力，溝渠式的穿隧型場效應結構之絕緣閘極雙極性電晶體被研究出擁有改善此問題的能力。然而此元件有N型口袋的結構後，不僅增強接面(P+-cathode/n-drift)電場同時也增強漂移區電場，因此相較於金屬氧化物半導體結構之絕緣閘極雙極性電晶體，此元件擁有較優的導通電流與耐壓能力。

The lateral insulated-gate bipolar transistor power device has been proposed that a smaller on-state voltage drop compared with metal-oxide-semiconductor field-effect transistor power device and tunneling-field-effect transistor power device. Because the P+-anode/N- drift junction of the device turn on, the large series resistance in the drift region can be effectively reduced. In this thesis, the results of different gate-positions of planar TFET-IGBT have been discussed, there is a trade-off between the electric field in P+-cathode/N- drift junction and N- drift region. Furthermore, planar TFET-IGBT with removal of P-well and ion implant to form n-pocket can significantly enhance the band-to-band tunneling near the P+-cathode/N- drift junction, and the on-current of the device would be obviously increased. Nevertheless, a large electric field in the depletion region of P+-cathode/N- drift junction would result in breakdown voltage degradation. Therefore, the optimization of the characteristics of planar TFET-IGBT requires a trade-off between forward current and reverse blocking voltage.
For improving the blocking voltage of the device, trench-type TFET-IGBT be studied with better breakdown characteristic. It is found that the usage of n-pocket can enhance the electric field of trench-type TFET-IGBT not only near the P+-cathode/N- drift junction but also in N- drift region. As a result, the on-state capability and blocking voltage characteristic of trench-type TFET-IGBT can be obviously improved compared with those of MOS-IGBT.

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