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研究生: 游鈞如
Chun-Ju Yu
論文名稱: 氧化鋅奈米柱摻雜石墨相氮化碳與高能隙薄膜材料複合結構之氫氣感測研究
The Studies of g-C3N4 Doped ZnO Nanorods with High band gap film composite structure for H2 Sensing Applications
指導教授: 黃柏仁
Bohr-Ran Huang
口試委員: 周賢鎧
Shyan-Kay Jou
段維新
Wei-Hsing Tuan
學位類別: 碩士
Master
系所名稱: 電資學院 - 光電工程研究所
Graduate Institute of Electro-Optical Engineering
論文出版年: 2021
畢業學年度: 109
語文別: 中文
論文頁數: 223
中文關鍵詞: 氧化鋅奈米柱石墨相氮化碳超奈米鑽石氧化鎵氫氣感測器
外文關鍵詞: ZnO nanorods, Graphite carbon nitride, Ultra-nanocrystalline diamond, Gallium oxide, Hydrogen gas sensor
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本研究以簡單與低成本的製程技術製備高效能的氫氣感測元件,內文將分為三個部分。第一部分探討不同成長溶液濃度的氧化鋅奈米柱之氫氣感測及物性分析。接著在摻雜不同條件的石墨相氮化碳於氧化鋅奈米柱之氫氣感測及物性分析。第二部分則是將前述摻雜石墨相氮化碳的氧化鋅奈米柱成長於超奈米鑽石結構上,再做氫氣感測及物性分析。第三部分則是將第一部分結果成長於退火前後之氧化鎵結構上,再做氫氣感測及物性分析。此外,針對氫氣感測最好的試片,將其進行穩定性、重複性及選擇性量測。
研究發現,氧化鋅奈米柱在成長溶液濃度為35 mM時,由拉曼與XRD分析得知有較佳的結晶品質,在500 ppm的氫氣濃度下,響應值為12.7%。接著在水熱法中添加不同參數的石墨相氮化碳,後成長石墨相氮化碳複合氧化鋅奈米柱,響應值有所提升,在500 ppm的氫氣濃度下,響應值為23%。造成提升的因素為,因為氧化鋅與石墨相氮化碳的晶格參數不同,並且之間存在新的缺陷使得響應度獲得提升,將此結構複合於超奈米鑽石上,在500 ppm的氫氣濃度下,響應值為43.7%。響應值與穩定度皆有增加,因為超奈米鑽石這層釋放出大量的碳,因此吸附水平提高,使得石墨相氮化碳複合氧化鋅奈米柱的吸附能力和缺陷性質增加。
進一步研究,氧化鋅奈米柱在成長於氧化鎵結構上,在500 ppm的氫氣濃度下,響應值為16.3%。石墨相氮化碳於氧化鋅奈米柱/片在成長於氧化鎵結構上,在500 ppm的氫氣濃度下,響應值為18.7%。石墨相氮化碳於氧化鋅奈米柱/片在成長於退火後氧化鎵結構上,在500 ppm的氫氣濃度下,響應值為30%。因為奈米柱與奈米片表面積的增加,表面能快速的解離,使得更多的電子釋放到導帶響應值獲得提升,隨著摻雜石墨相氮化碳與氧化鎵退火後對於使得穩定性與衰退性獲得改善。超奈米鑽石整體響應對於氧化鎵較佳,是因為氧缺陷區所造成的影響,由OI/OIall比值可知Zn控制引入氧缺陷區的有效途徑,因此對於氫氣響應度高。


In this study, a structure of graphite carbon nitride (g-C3N4) doped zinc oxide nanorods (ZNR) was synthesized using a simple and cost-effective method. Through this method, g-C3N4 were successfully doped with ZNR. Various analyses were used to confirm the successful formation of the gCN-ZNR structure. The hydrogen sensing properties of gCN-ZNR were investigated, which shows that remarkably improved H2 sensing performances for gCN doped ZNR.Then, this structure is combined with the ultra-nanodiamonds (N-UNCD), which improved H2 sensing performances and the stability. The gCN-ZNR/N-UNCD based H2 sensor shows the good response of 43.7% since the N-UNCD layer releases a large amount of carbon, which increases the adsorption capacity for the gCN-ZNR structure.
Then the gCN-ZNR structure grown on Ga2O3 film(gCN-ZNR/Ga2O3) and the gCN-ZNR structure grown on annealed Ga2O3 film(gCN-ZNR/Ga2O3 A) were studied. It was found that the nanorods and nanosheets structure effectively increased the surface area that provides more active sites, which leads to the rapid gas adsorption/desorption, thereby exhibit a higher response for both of the gCN-ZNR/Ga2O3 and gCN-ZNR/Ga2O3 A samples. Moreover, the stability and decay properties are improved for the gCN-ZNR/Ga2O3 A samples.
In summary, the response value(43.7%) of gCN-ZNR/N-UNCD is better than that of gCN-ZNR/Ga2O3 A(30.0%) since the ratio of OI/OIall (the concentration of oxygen vacancy) is higher for gCN-ZNR/N-UNCD samples. This studies shows promising hybrid nanostructures for future hygrogen sensor applications.

摘要 I 致謝 III 目錄 IV 圖目錄 VIII 表目錄 XVII 第一章 緒論 1 1.1 前言 1 1.2 研究動機 7 第二章 文獻探討 8 2.1 氧化鋅材料特性簡介 8 2.1.1 水熱法成長機制 10 2.1.2 VLS法成長機制 12 2.1.3 電化學沉積法 13 2.2 石墨相氮化碳(g-C3N4)特性簡介 16 2.2.1熱蒸氣冷凝法 17 2.2.2微接觸印刷輔助途徑法 18 2.2.3溶劑熱途徑法 19 2.2.4直接成長溶劑熱途徑法 20 2.3 鑽石薄膜之特性簡介 21 2.3.1鑽石薄膜基本性質及結構 21 2.3.2 超奈米鑽石成長機制 22 2.3.3奈米結晶鑽石 24 2.4 氧化鎵(Ga2O3)特性簡介 25 2.5 氣體感測器介紹 28 2.5.1 金屬氧化物半導體型[8] 28 2.5.2 電化學固態電解質型 28 2.5.3 觸媒燃燒型 29 2.5.4 表面聲波型 29 2.6 氧化鋅與氫氣感測 30 第三章 實驗方法 33 3.1 實驗設計與流程 33 3.2 使用材料介紹 37 3.3 基板清洗 38 3.4熱蒸氣冷凝法(TVC)製備石墨相氮化碳 40 3.5 水熱法(Hydrothermal method)成長氧化鋅奈米柱 41 3.5.1 製備氧化鋅晶種層 41 3.5.2 成長氧化鋅奈米柱 42 3.5.3 製備摻雜石墨相氮化碳之氧化鋅結構 43 3.6 微波電漿化學氣相沉積法成長超奈米鑽石 44 3.7 磁控薄膜濺鍍系統濺鍍氧化鎵薄膜 45 3.8 儀器設備與材料分析方法 46 3.8.1 場發射掃描式電子顯微鏡 (Scanning Electron Microscope, FE-SEM) 46 3.8.2 紫外光-可見光光譜儀(UV-VIS Spectrophotometer) 47 3.8.3拉曼光譜儀(Raman Spectrum) 47 3.8.4 傅立葉轉換紅外線光譜儀 (FTIR) 48 3.8.5 X射線繞射儀(X-ray Diffraction, XRD) 49 3.8.6光激發螢光頻譜儀(Photoluminescence, PL) 50 3.8.7場發射槍穿透式電子顯微鏡(300kV)(FEG-TEM ) 51 3.8.8 X光電子能譜分析儀(X-ray photoelectron spectroscopy,XPS) 52 3.8.9 高真空量測系統(Gas Sensor, GS) 53 第四章 氧化鋅奈米柱摻雜石墨相氮化碳(gCN-ZNR)之氫氣感測研究 54 4.1 氧化鋅奈米柱之特性分析 54 4.1.1 不同成長濃度之氧化鋅奈米柱表面型態分析 54 4.1.2 拉曼光譜儀分析 57 4.1.3 X-ray繞射儀分析 59 4.1.4 紫外光-可見光光譜儀分析 60 4.1.5 氧化鋅奈米柱之氫氣感測分析 61 4.2石墨相氮化碳(g-C3N4)之特性分析 67 4.2.1 g-C3N4光激發螢光頻譜儀分析 67 4.2.2 g-C3N4傅立葉轉換紅外線光譜儀分析 68 4.2.3 g-C3N4 X-ray 繞射儀分析 69 4.2.4 g-C3N4紫外光-可見光譜儀圖分析 70 4.3 gCN-ZNR複合結構之特性分析 70 4.3.1 gCN-ZNR表面型態分析 71 4.3.2 gCN-ZNR拉曼光譜儀分析 73 4.3.3 gCN-ZNR X-ray 繞射儀分析 75 4.3.4 gCN-ZNR紫外光-可見光光譜儀分析 78 4.3.5 gCN-ZNR場發射槍穿透式電子顯微鏡分析 79 4.3.6 gCN-ZNR X光電子能譜分析儀分析 80 4.3.7 gCN-ZNR複合結構之氫氣感測分析 82 4.3.8 gCN-ZNR複合結構之選擇性分析 86 4.3.9 gCN-ZNR複合結構之氫氣感測重複性分析 87 4.3.10 gCN-ZNR複合結構之氫氣穩定性分析 88 4.4 gCN-ZNR之氫氣感測總結 89 第五章 氧化鋅奈米柱摻雜石墨相氮化碳於超奈米鑽石(gCN-ZNR/N-UNCD)複合結構之氫氣感測研究 93 5.1 超奈米鑽石(N-UNCD)之特性分析 93 5.1.1 N-UNCD表面型態分析 93 5.1.2 N-UNCD拉曼光譜儀分析 96 5.2 gCN-ZNR/N-UNCD複合結構之特性分析 97 5.2.1 gCN-ZNR/N-UNCD表面型態分析 98 5.2.2 gCN-ZNR/N-UNCD拉曼光譜儀分析 100 5.2.3 gCN-ZNR/N-UNCD X-ray 繞射儀分析 103 5.2.4 gCN-ZNR/N-UNCD紫外光-可見光光譜儀分析 106 5.2.5 gCN-ZNR/N-UNCD場發射槍穿透式電子顯微鏡分析 107 5.2.6 gCN-ZNR/N-UNCD X光電子能譜分析儀分析 108 5.2.7 gCN-ZNR/N-UNCD複合結構之氫氣感測分析 109 5.2.8 gCN-ZNR/N-UNCD複合結構之選擇性分析 114 5.2.9 gCN-ZNR/N-UNCD複合結構之氫氣重複性分析 115 5.2.10 gCN-ZNR/N-UNCD複合結構之氫氣穩定性分析 116 5.3 gCN-ZNR/N-UNCD之氫氣感測總結 117 第六章氧化鋅奈米柱摻雜石墨相氮化碳於氧化鎵(gCN-ZNR/β-Ga2O3)複合結構之氫氣感測研究 121 6.1氧化鎵之特性分析 121 6.1.1表面型態分析 121 6.1.2 X-ray 繞射儀分析 123 6.1.3紫外光-可見光光譜儀分析 126 6.1.4氧化鎵X光電子能譜分析儀分析 128 6.1.5氧化鎵之氫氣感測分析 129 6.1.6 Ga2O3、β-Ga2O3 A6之氫氣感測總結 131 6.2氧化鋅奈米片於氧化鎵(ZNS/β-Ga2O3)複合結構之特性分析 133 6.2.1 ZNS/β-Ga2O3表面型態分析 133 6.2.2 ZNS/β-Ga2O3 X-ray 繞射儀分析 134 6.2.3 ZNS/β-Ga2O3紫外光-可見光光譜儀分析 136 6.2.4 ZNS/β-Ga2O3 X光電子能譜分析儀分析 137 6.2.5 ZNS/β-Ga2O3複合結構之氫氣感測分析 139 6.2.6 ZNS/β-Ga2O3複合結構之選擇性分析 143 6.2.7 ZNS/β-Ga2O3複合結構之氫氣重複性分析 144 6.2.8 ZNS/β-Ga2O3複合結構之氫氣穩定性分析 145 6.2.9 ZNS/β-Ga2O3之氫氣感測總結 146 6.3氧化鋅奈米柱摻雜石墨相氮化碳於氧化鎵(gCN-ZNR/β-Ga2O3)複合結構之特性分析 148 6.3.1 gCN-ZNR/β-Ga2O3表面型態分析 148 6.3.2 gCN-ZNR/β-Ga2O3 X-ray 繞射儀分析 149 6.3.3 gCN-ZNR/β-Ga2O3紫外光-可見光光譜儀分析 151 6.3.4 gCN-ZNR/β-Ga2O3 X光電子能譜分析儀分析 152 6.3.5 gCN-ZNR/β-Ga2O3複合結構之氫氣感測分析 154 6.3.6 gCN-ZNR/β-Ga2O3複合結構之選擇性分析 158 6.3.7 gCN-ZNR/β-Ga2O3複合結構之氫氣重複性分析 159 6.3.8 gCN-ZNR/β-Ga2O3複合結構之氫氣穩定性分析 160 6.3.9 gCN-ZNR/β-Ga2O3之氫氣感測總結 161 6.4氧化鋅奈米片摻雜石墨相氮化碳於氧化鎵經600oC退火 (gCN-ZNS/β-Ga2O3A6)複合結構之特性分析 163 6.4.1 gCN-ZNS/β-Ga2O3 A6表面型態分析 163 6.4.2 gCN-ZNS/β-Ga2O3 A6 X-ray 繞射儀分析 164 6.4.3 gCN-ZNS/β-Ga2O3 A6紫外光-可見光光譜儀分析 166 6.4.4 gCN-ZNS/β-Ga2O3 A6 X光電子能譜分析儀分析 168 6.4.5 gCN-ZNS/β-Ga2O3 A6複合結構之氫氣感測分析 170 6.4.6 gCN-ZNS/β-Ga2O3A6複合結構之選擇性分析 173 6.4.7 gCN-ZNS/β-Ga2O3A6複合結構之氫氣重複性分析 174 6.4.8 gCN-ZNS/β-Ga2O3A6複合結構之氫氣穩定性分析 175 6.5 gCN-ZNR、gCN-ZNR/N-UNCD、Ga2O3、β-Ga2O3 A6、ZNS/β-Ga2O3、gCN-ZNR/β-Ga2O3、gCN-ZNS/β-Ga2O3 A6複合結構XPS綜合分析 176 6.6 gCN-ZNS/β-Ga2O3 A6之氫氣感測總結 186 第七章 結論與未來展望 189 7.1 結論 189 7.2 未來展望 190 參考文獻 191

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