本研究主要是建構TM-AFM定振幅之奈米級模擬量測模型，使用矽(Si)原子之晶格排列出TM-AFM之矩形懸臂探針(Tip)與奈米級階梯與V形標準試片之原子模型，且以莫氏力來計算試片與探針之作用力，配合所推導之TM-AFM振動方程式，建構出TM-AFM定振幅奈米級模擬量測模型。
本文以所建立之TM-AFM定振幅之奈米級模擬量測模型來模擬與分析原子力顯微鏡量測理想奈米級階梯與V形標準試片之形貌與誤差結果，並與真實原子力顯微鏡量測奈米級階梯與V形標準試片之掃描輪廓曲線結果相比較，以驗證本研究模擬量測模型之合理性。且造成模擬掃描階梯輪廓與真實掃描階梯輪廓之誤差原因，除了模擬探針之幾何外型外，還包括真實實驗中所具有之掃描速度所造成之誤差。而造成模擬掃描V型輪廓與真實掃描V型輪廓之誤差原因，除了探針幾何外形與真實實驗之掃描速率外，還包括試片表面形貌影響所造成的誤差。同時針對相同探針尖端圓角半徑不同外形斜邊角度，以理想半圓形奈米級試片進行原子力顯微鏡模擬量測，並探討不同外形斜邊角度對掃描輪廓曲線的影響，結果發現模擬之掃描輪廓主要受到模擬探針之幾何外型的影響。

The study mainly constructs a TM-AFM constant-amplitude nanoscale simulated measuring model. Using the lattice of silicon (Si) atoms, the study arranges the atomic model of TM-AFM rectangular cantilever probe tip as well as the atomic models of nanoscale ladder and V-shaped standard samples. Morse force is adopted to calculate the action force between sample and probe. Also using the induced TM-AFM vibration equation, the study constructs a TM-AFM constant-magnitude nanoscale simulated measuring model.
The study uses TM-AFM constant-amplitude nanoscale simulated measuring model to simulate and analyze the measurement as well as the appearance of the nanoscale ladder sample and the V-shaped standard sample and the error results. They are compared with the real TM-AFM measured nanoscale ladder sample and the curve of scanning profile of the V-shaped standard sample, so as to prove the rationality of the simulated measuring model established by this study. Regarding the reasons for the error between the simulated scanning profile of ladder sample and the real scanning profile of ladder sample, besides the simulated geometric shape of probe, they also include the error caused by the scanning speed in the real experiment. As to the reasons for the error between the simulated scanning V-shaped sample profile and the real scanning V-shaped sample profile, besides the geometric shape of probe and the scanning speed of the real experiment, they also include the error caused by the influence of surface pattern of sample. At the same time, focusing on the same probe tip radius with different bevel angles, the study uses an ideal semicircle nanoscale sample to perform TM-AFM simulated measurement to investigate the influence of different bevel angles on the curve of scanning profile. As found in the results, the simulated scanning profile is mainly influenced by the geometric shape of the simulated probe.

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