本論文主要利用表面光電壓(SPV)與光激發螢光(PL)光譜來研究加入少量不同N含量之In0.176Ga0.824P0.98N0.02 / GaP薄膜。由表面光電壓(SPV)與光激發螢光(PL)光譜，可看出InxGa1-xP1-yNy能隙隨著N含量增加的而下降。並且量測訊號隨溫度(15K-300K)變化的情形，並利用Varshni方程式來得到其相關的溫度參數並加以討論。

The optical properties of In0.176Ga0.824P1-yNy / GaP films have been studied by using surface photovoltage spectroscopy (SPV) and photoluminescence (PL) techniques. From SPV and PL spectra, we observe the bandgap decreases with incorporation of nitrogen. The transitions of temperature dependence measurements (77K-400K) of SPV were fitted by the Varshni equation. The temperature parameters are also evaluated and discussed. From PL low temperature measurements, we observe their peak position is lower than SPV absorption position. It is due to the nitrogen cluster.

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