研究生: |
林宗建 Tsung-chien Lin |
---|---|
論文名稱: |
光偵測放大積體電路設計與分析 Design and Analysis of Integrating Circuits for Light Detection and Signal Amplification |
指導教授: |
劉政光
Cheng-Kuang Liu |
口試委員: |
莊敏宏
Miin-Horng Juang 張勝良 Sheng-Lyang Jang 周肇基 none |
學位類別: |
碩士 Master |
系所名稱: |
電資學院 - 電子工程系 Department of Electronic and Computer Engineering |
論文出版年: | 2005 |
畢業學年度: | 93 |
語文別: | 中文 |
論文頁數: | 100 |
中文關鍵詞: | 光閘式感光元件 、轉阻抗放大器 |
外文關鍵詞: | photogate, TIA |
相關次數: | 點閱:214 下載:0 |
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本論文探討三個主題,一為光二極體式光電流偵測放大電路之模擬分析,一為光電流轉換之轉阻抗放大積體電路(Transimpedance Amplifier)實作,另一個是光閘極式之光偵測放大積體電路之實作。
第一部份針對光二極體式光電流偵測電路,設計光電流搭配電流鏡架構來偵測放大光電流,利用模擬來分析其特性。
第二部份為光電流轉換之轉阻抗放大積體電路之實作,利用0.35μm的CMOS製程實際製作光偵測轉阻抗放大積體電路,將接收下來的光電流直接轉換為電壓輸出,文中探討分析其增益與頻率特性。
第三部份為光閘極式之光偵測放大積體電路的實作,其作用為可在光轉換成電荷之後,暫存於本身位能井中,並可藉由位能井之深淺來做電荷移轉。
以上所涵蓋三個主題,皆有同一的特色,就是均可採用矽為材料來實現。利用不同的電路設計,不但進行模擬分析,而且以0.35μm的CMOS製程來實現,探討其增益與頻率特性。
This thesis studies three topics:the simulation of p-n diode type light-detection circuit using current mirror, the implementation of transimpedance amplifier using 0.35μm CMOS process, and the implementation of photogate type integrated circuit using 0.35μm CMOS process.
First, the simulation of light-detection circuit of the diode type is described. The application of current mirror structure to detect photocurrent is reviewed. Simulation results for 0.35μm CMOS process are discussed.
In the second part, the transimpedance amplifier employing current minors is studied. It is implemented using TSMC 0.35μm CMOS process.
In the last part, the fabrication of optical receiving circuit of the photogate type is described. After the light is converted into the electric charge, it can store the charge in the potential well temporarily. And, it can transfer the electric charge to distinguish the signal from the background light .
In the topics mentioned above, they have the same feature in the use of material, the silicon. Using different designs, we have not only simulate these circuits, but also implement them using 0.35μm CMOS process.
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