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研究生: 吳偉泓
Wei-Hung Wu
論文名稱: 新式全曝光系統涉及應用
Design of novel interference lithography systems
指導教授: 李三良
San-Liang Lee 
口試委員: 徐世祥
Shih-Hsiang Hsu 
洪勇智
Yung-Jr Hung
何文章
Wen-Jeng Ho
學位類別: 碩士
Master
系所名稱: 電資學院 - 光電工程研究所
Graduate Institute of Electro-Optical Engineering
論文出版年: 2016
畢業學年度: 104
語文別: 中文
論文頁數: 87
中文關鍵詞: 全像術曝光全像術曝光系統週期性結構蝕刻
外文關鍵詞: Interference lithography system, The periodic structures by using etching.
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傳統的全像術曝光系統因其反射鏡限制了其週期大小與曝光面積,為了克服此問題,本論文採用兩條光纖取代原有的反射鏡及擴束器,並利用光纖可彎曲的特性,改良全像干涉曝光系統的光路,使其曝光面積較不受干涉圖案週期的影響。而為了更簡化製程,本論文另外設計出改良式Lloyd’s mirror製具夾角從原本的90°變成55°,主要應用於特定的大週期,製作不同週期的樣品只需單一轉軸,簡化全像術曝光系統,並利用新式全像術系統製作二維週期性結構,且利用濕式蝕刻製作出週期性的孔洞和椎狀柱的圖案。


The periodic structure realized with conventional Lloyd’s Mirror interference lithography system has limitation on its period and exposure area due to the geometric structure. To overcome the problem, this thesis instigates the formation of long-period gratings by replacing the original reflective mirror and beam expander with two fibers. The optical path of the holography exposure system can be simplified by utilizing the flexible characteristic of fibers. This scheme can also be utilized to form long-period interference patterns over relatively large exposure area. For realizing long period patterns, we also propose an improved Lloyd's mirror, in which the angle between the mirror plate and sample plate is changed from 90° to 55°. Only single-axis tuning is required for changing the period of the interference patterns. This can greatly simplify the optical exposure of periodic patterns. The system is used to fabricate one- and two-dimensional periodic structures; and wet etching is then applied to obtain periodic patterns of holes and cone pillars.

摘要 Abstract 目錄 圖目錄 表目錄 第一章 研究動機與元件技術介紹 1-1 前言 1-2 全像術干涉簡介 1-3 研究動機 1-4 研究方法 1-5 論文架構 第二章 光路設計與干涉理論 2-1 光路設計 2-2-1 光纖式全像干涉光路設計 2-2-2 具55°反射平台全像干涉光路設計 第三章 週期結構製程步驟 3-1 製程流程 3-2 全像干涉的曝光與週期測量 3-2-1 光纖耦合損耗與系統穩定度測試 3-2-2干涉曝光面積與曝光能量的測量 3-2-3全像術二維週期結構曝光能量測量 3-2-4光柵週期的測量 第四章 一維和二維週期結構結果與討論 4-1 光纖式全像干涉量測結果與討論 4-2-1 一維週期結構結果 4-2-2 二維週期結構結果 4-2-3 週期性結構分析 4-2 具55°反射平台曝光系統量測結果與討論 4-3-1 一維週期結構結果 4-3-2 二維週期結構結果 4-3-3 週期性結構分析 4-3 元件蝕刻結果與比較 4-3-1 四甲基氫氧化銨(TMAH)蝕刻元件分析與比較 4-3-2 固定KOH濃度蝕刻元件分析與比較 4-3-3 固定金屬誘發蝕刻時間元件分析與比較 第五章 結論 5-1 成果與討論 5-2 未來研究方向 參考文獻

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