本論文中主要利用完善的次微米波導原理、I-Line微影技術以及0.02 高解析度光學步進馬達來證實我們所製作出來的高效率矽線波導。損耗造成的主要原因為表面的射散問題，所以最佳的蝕刻氣體流量控制以及硬罩幕光罩的選擇可以得到較佳的光波導側壁。
在光通訊裡，資料、聲音以及影像等資訊可以編碼到光通訊裡，經由光調制器傳送訊號到目的地。在本論文中，Mach-Zehnder interferometer (MZI)將被設計及製造在SOI平臺上。
由於次微米尺寸所佔用資源少，因此新竹國家奈米元件實驗室(NDL)廣大的研發相容於CMOS製程的光學微影技術。而在台灣大學奈米機電系統研究中心完整的研發晶圓切割技術。對性能的研究設計、特性以及後端的研磨製程等所有的研發技術均在台灣科技大學光電積體電路實驗室。
來自於矽線波導上層覆蓋層的應力將會造成光波導的雙折射效應和極化相依損耗(PDL)。薄膜沉積來自電漿輔助化學氣相沉積(PECVD)以及低壓化學氣相沉積(LPCVD)，在經由完整的研究後成功地證實出40MP的低應力的反應氣體成分SiOx
矽線波導我們蝕刻深度為0.21 後，分別驗證出傳播損耗為10.14dB/cm及極化相依損耗5dB。將一p-i-n二極體塗佈金屬電極在MZI其中一臂，經由順偏產生擴散電流，載子動態分佈主導調制效率 和元件速度響應。從實驗資料的IV和CV曲線圖得知， 的順偏驅動電壓約為0.82V。最後我們估算出我們順偏頻率響應速度約為1.7GHz。

The main research in this dissertation is to demonstrate the high quality silicon wire waveguide using the well-developed submicron waveguide theory, I-Line lithography, and 0.02 high resolution optical mode characterization. Due to the main loss effect on the surface scattering issue, the etch gas flow and the mask selection were optimized for better sidewall roughness of the optical waveguide.
In the optical telecommunications, the information of data, voice, and video can be encoded into the optical domain by optical modulation and transmitted to the destination. In this dissertation, the Mach-Zehnder interferometer (MZI) was also designed and fabricated on SOI platforms.
Due to the small footprint in the submicron dimension, the photolithography was extensively developed at National Nano Device Laboratories (NDL) in Hsinchu city for full compatibility with CMOS. The wafer dicing was accomplished in the Nano-Electro-Mechanical-Systems Research Center of National Taiwan University. The research on the performance design, characterization, and the back-end polishing processing were all developed in the OEIC group of National Taiwan University of Science and Technology.
The stress from the top cladding layer of the silicon wire will be another important issue on the birefringence and polarization dependent loss (PDL) of optical waveguides. The deposited film from the plasma enhanced chemical vapor deposition (PECVD) and low pressure chemical vapor deposition (LPCVD) was thoroughly studied and successfully demonstrated for stress as low as 40 MPa using reactive gas compositions, SiOx.
The silicon wire was demonstrated as 10.14 dB/cm and 5 dB, respectively, for the propagation loss and PDL on a waveguide width of 0.5 and etch depth of 0.21 . A p-i-n diode coated with metal pads on one arm of MZI was generating drift currents by forward biases, which dynamically dominate carriers distribution in a diode and furthermore illustrate the modulator efficiency and speed response. From the experimental data of IV and CV curves, the can be derived to be 0.82 V for forward bias. Finally the speed response of our silicon wire optical modulator can also be estimated as 1.7GHz in forward bias.

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