本研究是利用磁濺鍍的方式把Ir20Mn80反鐵磁性薄膜沉積於Corning 0211玻璃基板上，其樣品構造為glass (110 μm)/Ir20Mn80 (X Å)/Ta (100 Å)，其中X=1500 Å、1000 Å、500 Å、300 Å和100 Å，之後再依照鍍膜條件進行溫度為250 ℃、持溫一小時之加場熱處理，即分為無經過熱處理與有經過熱處理兩種樣品。接著利用樣品震動磁力計(VSM)對樣品進行磁性分析；XRD繞射儀進行薄膜結構之鑑定；奈米壓痕試驗儀得知薄膜楊氏係數(Ef)；電容式磁伸縮量測儀來量測不同薄膜厚度(X)的磁伸縮()與利用穿透式電子顯微鏡(TEM)觀察熱處理前後之晶粒尺寸(D)變化。
經由上列儀器分析後，得知Ir20Mn80薄膜結構以生長方向為<200>的織構為主。且未經過熱處理之Ir20Mn80薄膜楊氏係數為180 GPa；熱處理後之薄膜楊氏係數為170 GPa。在磁伸縮性質方面，磁伸縮值會隨著Ir20Mn80薄膜厚度的減小而減小，其值約從-30 ppm左右下降至-390 ppm左右，且當樣品經過熱處理後，磁伸縮值會再為下降。在TEM觀察中發現Ir20Mn80薄膜厚度為1500 Å時，晶粒尺寸約為17 nm，而經過熱處理過後其晶粒尺寸約為22 nm。
因此，當樣品經過溫度為250 ℃、持溫一小時之加場熱處理後，其磁伸縮訊號會比未經過熱處理的樣品表現的更為明顯，這是因為當Ir20Mn80薄膜經過熱處理後，有足夠的時間與驅動力進行退火熱處理三階段，使其薄膜之楊氏係數下降，晶粒尺寸成長，導致其磁伸縮性質更為明顯。

In this study, we have made Ir20Mn80 antiferromagnetic thin films on a Corning 0211 glass substrate, respectively, by sputtering method. Sample configuration is glass (110 m)/Ir20Mn80 (X Å)/Ta (100 Å), When X=1500 Å, 1000 Å, 500 Å, 300 Å and 100 Å. To anneal the sample, we had the annealing temperature 250 ℃, annealing time 1 hour. There were two sets of samples: one is annealing, the other is without. We analyzed the magnetic property by vibrating sample magnetometer (VSM). The crystalline structure and the phase were analyzed by XRD. Young’s modulus of thin film (Ef) was measured by the nano-indentation techniqe. Magnetostriction () of different thickness (X) were measured the change of electric capacitance, when the field (H) was varied. We used the transmission electron microscope (TEM) to observe one the change of grain size (D) before and after annealing.
After analysing via the above-listed instrument, we know that the Ir20Mn80 thin film grow with the <200> texture, Ef=180 GPa before annealing, Ef=170 GPa after annealing. As to the magnetostrictive part, the value has been decrease when the thickness decreases, i.e. from -30 ppm to -390 ppm. After annealing, the the value has been reduced again. Form TEM observation, for the X=1500 Å of Ir20Mn80 thin film, before annealing D=17 nm, and after annealing D has been grown to 22 nm.
So, after annealing, the magnetostriction of Ir20Mn80 thin film will be better than before annealing. Because after annealing, it had enough time and driving force to precede the three steps of annealing. That will also make the Young’s modulus drop, the grain size increase, and get better magnetostriction.

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