隨著積體電路(Integrated Circuit, IC)迅速發展演進，晶圓上金屬導線之線寬隨科技發展越來越小，在微型化發展過程中，為達金屬導線線寬微小化之目的，則需進行高解析度之微影製程，晶圓表面必須為極平坦的表面，因此化學機械化拋光(Chemical Mechanical Polishing/ Planarization, CMP)被廣泛應用於平坦化製程。本研究主要對磷酸基底之銅化學機械拋光液進行改良，並以水溶性之富勒烯/環糊精絡合物為磨粒與傳統奈米二氧化矽進行化學機械平坦化之研究。以弱酸性(pH 5)之拋光液配方延伸探討其中性(pH 7)及鹼性(pH 9)環境下的拋光表現，並對拋光液中的成分濃度進行調整，最後加入富勒烯水溶液完成拋光液備製。以動電位極化曲線分析不同濃度配方拋光液之腐蝕電位，探討與表面品質及移除率之間關係。最後，透過本實驗室所開發之電制動力輔助化學機械平坦化製程(Electro Kinetic Force Assisted CMP, EKF-CMP)對比傳統CMP製程之成效。實驗結果顯示，此改良後拋光液於中性拋光液拋光後，銅膜晶圓表面粗糙度降低50%，平均粗糙度(Sa) 約達 2 nm，並提升30%材料移除率達到230 nm/min。在圖案化晶圓方面，可以降低Ma.1(100 m/100m)及Ma.3(10 m/90m)之導線段差(dishing)至0，在Ma.2(50 m/50m)僅有2.85 nm之介電層腐蝕。

With the Integrated Circuit(IC) developed rapidly, the line width of the metal wire on the wafer became smaller in the miniaturization process. In order to the high-resolution lithography process, depth of focus (DOF) continues to be narrowed. To avoid defect on metallization process, the extremely flat wafer surface is necessary. Therefore, chemical mechanical polishing/ planarization (CMP) is widely used. This study mainly improves the copper chemical mechanical polishing solution of phosphoric acid base and chemical mechanical planarization of water-soluble fullerene/cyclodextrin complex with conventional SiO2 (Chemical Mechanical Polishing/Planarization, CMP). It is based on weakly acidic (pH 5) slurry formulation to adjust the polishing performance in the neutral (pH 7) and alkaline (pH 9) environments, and finally add the Beta-Cyclodextrin/C60 solution in the slurry composition. The corrosion potential of different concentrations of the formulation was analyzed by the potentiodynamic polarization curve to investigate the correlation between surface quality and material removal rate. Finally, the effectiveness of the traditional CMP process was compared with the Electro Kinetic Force Assisted CMP (EKF-CMP) process, developed by the laboratory. The experimental results show that the surface roughness of the copper wafer in the neutral slurry is improved 50% to surface roughness(Sa) 2 nm; The removal rate of the material is up 30% to 230 nm/min. In the patterned wafers, the wire gap differences between Ma.1 (100 m/100m) and Ma.3 (10 m/90m) can be reduced to zero, and the erosions of Ma.2 (50 m/50m) can be achieved to 2.85 nm.

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