本論文研製積體化紫外光感測器與LED警示燈。所使用的晶圓為商用氮化鎵晶圓，經由光罩設計與利用矽擴散(Silicon Diffusion)製程，達到選擇性地將部分最上層的p-GaN反轉成n-GaN，使其結構由p-i-n變成n-p-i-n結構，在同一片晶圓完成發光二極體、p-i-n結構光偵測器以及n-p-i-n結構光電晶體三種元件。並量測發光二極體的光電特性，以及兩種不同電子阻擋層結構晶圓的n-p-i-n光偵測器特性包括暗電流、外部量子效率與在不同偏壓下的響應率。並以運算放大器(operational amplifier)將光偵測器光電流訊號轉為電壓訊號，再透過二級放大達到LED 驅動電壓，藉此可以將看不見的紫外光透過可見的LED來展現與警示。
在光電特性量測上，發光二極體的啟動電壓約為3.0 V，串聯電阻約為182 Ω。在電流為10 mA下的光輸出功率為4.8 mW，證明此積體化製程是成功相容的，並不影響發光二極體的光電特性。
再來比較兩種晶圓QRBAH與FEBI製作的光偵測器，其外部量子效率峰值波長分別為384 nm和380 nm，QRBAH外部量子效率值在不同逆向偏壓0 V、1.5 V 、3 V、5 V、7 V、9 V、11 V下分別為37.2 %、46.1 %、54.3 %、56.2 %、64.8 %、88.0 %、109 %。而FEBI外部量子效率值在不同逆向偏壓0 V、1.5 V、3 V、5 V、7 V下分別為30.3 %、32.2 %、33.1 %、39.5 %、76.1 %。兩種n-p-i-n光電晶體元件有著相似的光電特性，而在逆向偏壓7 V時都開始有明顯的電流增益，且峰值外部量子效率與響應率都很相近，但響應速度不同。
接著使用n-p-i-n光電晶體元件將偵測UV光的電流訊號轉為電壓訊號。並放大轉換完之電壓訊號成功驅動LED。因此n-p-i-n光電晶體更適合做為紫外光偵測器，響應率比p-i-n光偵測器高，與LED積體化不僅省去特殊磊晶的成本，還可增加功能，例如本實驗使用LED為警示燈。

This paper develops integrated UV sensor and LED warning light. The wafers used are commercial GaN wafers, designed through a mask and utilizing the Silicon Diffusion process. Selectively inverting part of the uppermost layer of p-GaN into n-GaN, and changing its structure from p-i-n to n-p-i-n structure. Three components of light-emitting diode, p-i-n structured photodetector and n-p-i-n structured phototransistor on the same wafer. The characteristics of light-emitting diodes are measured. The characteristics of two different electron blocking layer wafers of n-p-i-n photodetectors included dark current, external quantum efficiency, responsivity under different bias voltages, and responsivity. And then, The operational amplifier is used to convert the photodetector photocurrent signal into a voltage signal and then passes the secondary amplification to reach the LED Turn-on voltage. In this way, invisible UV light can be seen and alerted through visible LED.
First, In the photoelectric characteristics, the turn on voltage of the light-emitting diode is about 3.0 V, and the series resistance is about 159 Ω. The light output power of the light-emitting diode at a current of 10 mA is 4.8 mW. It’s proving that this integrated process is successfully compatible.
Then compare the photodetectors made by QRBAH and FEBI. The external quantum efficiency peak wavelengths are 384 nm and 380 nm, respectively. The external quantum efficiency of QRBAH are 37.2 %, 46.1 %, 54.3 %, 56.2 %, 64.8 %, 88.0 %, 109 % under different reverse bias voltages of 0 V, 1.5 V, 3 V, 5 V, 7 V, 9 V, and 11 V, respectively. The FEBI external quantum efficiency are 30.3 %, 32.2 %, 33.1 %, 39.5 %, and 76.1 % at different reverse bias voltages of 0 V, 1.5 V, 3 V, 5 V, and 7 V, respectively. The two n-p-i-n components have similar photoelectric characteristics, and the current gain starts at 7 V at the reverse bias voltage, and the peak external quantum efficiency and responsivity are similar, but the response speed is different.
The current signal for detecting UV light is converted into a voltage signal using an n-p-i-n component. And the amplified voltage signal is amplified to successfully turn-on the LED. Therefore, the n-p-i-n component is more suitable as an ultraviolet light detector, and the responsivity higher than that of the p-i-n photodetector. Integration with LEDs not only eliminates the cost of special epitaxy, but also adds functionality. For example, LEDs are used as warning lights in this experiment.

[1] E. Fred Schubert (2006). Light-emitting diode. Cambridge University Press. New York.
[2] G. Y. Xu, A. Salvador, W. Kim, Z. Fan, C. Lu, H. Tang, H. Morkoç, G. Smith, M. Estes, B. Goldenberg, W. Yang, S. Krishnankutty (1997). High speed, low noise ultraviolet photodetectors based on GaN structures. Appl. Phys. Lett., 71, 2154.
[3] D. Walker, X. Zhang, P. Kung, A. Saxler, S. Javadpour, J. Xu & M. Razeghi (1996). AlGaN ultraviolet photoconductors grown on sapphire. Appl. Phys. Lett., 68, 2100.
[4] J. B. Limb, D. Yoo, J. H. Ryou, W. Lee, S. C. Shen, R. D. Dupuis, M. L. Reed, C. J. Collins, M. Wraback, D. Hanser, E. Preble, N. M. Williams, K. Evans (2006). GaN ultraviolet avalanche photodiodes with optical gain greater than 1000 grown on GaN substrates by metal-organic chemical vapor deposition. Appl. Phys. Lett., 89, 011112.
[5] A. Osinsky, S. Gangopadhyay, R. Gaska, B. Williams, M. A. Khan, D. Kuksenkov, & H. Temkin(1998). Visible-blind GaN Schottky barrier detectors grown on Si (111). Appl. Phys. Lett., 71, 2334.
[6] G. Parish, S. Keller, P. Kozodoy, J. A. Ibbetson, H. Marchand, P. T. Fini, S. B. Fleischer, S. P. DenBaars, U. K. Mishra (1999). High-performance (Al,Ga)N-based solar-blind ultraviolet p–i–n detectors on laterally epitaxially overgrown GaN. Appl. Phys. Lett., 75, 247.
[7] E. Monroy, M. Hamilton, D. Walker, P. Kung, F. J. Sánchez, & M. Razeghi (1999). High-quality visible-blind AlGaN pin photodiodes. Appl. Phys. Lett., 74, 1171.
[8] Y. Zhang, S. -C. Shen, H. J. Kim, S. Choi, J.-H. Ryou, R. D.Dupuis, & B. Narayan (2009). Low-noise GaN ultraviolet p-i-n photodiodes on GaN substrates. Appl. Phys. Lett., 94, 221109.
[9] K. A. McIntosh, R. J. Molnar, L. J. Mahoney, A. Lightfoot, M. W. Geis, K. M. Molvar, I. Melngailis, R. L. Aggarwal, W. D. Goodhue, S. S. Choi, D. L. Spears, S. Verghese (1999). GaN avalanche photodiodes grown by hydride vaporphase epitaxy. Appl. Phys. Lett., 75, 3485.
[10] B. Yang, T. Li, K. Heng, C. Collins, S. Wang, J. C. Carrano, R. D. Dupuis, J. C. Campbell, M. J. Schurman, I. T. Ferguson (2000). Low dark current GaN avalanche photodiodes. IEEE J. Quantum Electron., 36(12), 1389-1391.
[11] J. B. Limb, D. Yoo, J. H. Ryou, W. Lee, S. C. Shen, R. D. Dupuis, M. L. Reed, C. J. Collins, M. Wraback, D. Hanser, E. Preble, N. M. Williams, K. Evans (2006). GaN ultraviolet avalanche photodiodes with optical gain greater than 1000 grown on GaN substrates by metal-organic chemical vapor deposition. Appl. Phys. Lett., 89, 011112.
[12] S-C. Shen, Y. Zhang, D. Yoo, J-B. Limb, J-H. Ryou, P. D. Yoder, & R. D. Dupuis (2007). Performance of Deep Ultraviolet GaN Avalanche Photodiodes Grown by MOCVD. IEEE Photon. Technol. Lett., 19(21), 1744-1746.
[13] Shyh-Chiang Shen, Tsung-Ting Kao, Hee-Jin Kim, Yi-Che Lee, Jeomoh Kim, Mi-Hee Ji, Jae-Hyun Ryou, Theeradetch Detchprohm, Russell D. Dupuis (2015). GaN/InGaN avalanche phototransistors. Appl. Phys. Express, 8, 032101.
[14] Wei Yang, Thomas Nohava, Subash Krishnankutty, Robert Torreano, Scott McPherson, & Holly Marsh (1998). High gain GaN/AlGaN heterojunction phototransistor. Appl. Phys. Lett. 73(7). 978-980.
[15] R. Mouillet, A. Hirano, M. Iwaya, T. Detchprohm, H. Amano, & I. Akasaki (2001). Photoresponse and Defect Levels of AlGaN/GaN Heterobipolar Phototransistor Grown on Low-Temperature AlN Interlayer. Jpn. J. Appl. Phys., 40, 498.
[16] M. L. Lee, J. K. Sheu, Yung-Ru Shu (2008). Ultraviolet bandpass Al0.17Ga0.83N/GaN heterojunction phototransistors with high optical gain and high rejection ratio. Appl. Phys. Lett., 92, 053506.
[17] Tsung-Ting Kao, Jeomoh Kim, Theeradetch Detchprohm, Russell D. Dupuis, Shyh-Chiang Shen (2016). High-Responsivity GaN/InGaN Heterojunction Phototransistors. IEEE Photon Technol Lett, 28(19), 2035-2038.
[18] Min Zhu, Jun Chen, Jintong Xu, Xiangyang Li (2017). Optimization of GaN/InGaN Heterojunction Phototransistor. IEEE Photon Technol Lett, 29(4), 373-376.
[19] Pinghui S. Yeh, Teng-Po Hsu, Yen-Chieh Chiu, Sian Yang, Cheng-You Wu, Jung-Shan Liou (2017). III-Nitride Phototransistors Fabricated on a Light-Emitting-Diode Epitaxial Wafer. IEEE Photonics Technology Letters, 29(19), 1679-1682.
[20] Zhaojun Liu, Jun Ma, Tongde Huang, Chao Liu, and Kei May Lau(2014). Selective epitaxial growth of monolithically integrated GaN-based light emitting diodes with AlGaN/GaN driving transistors. Appl. Phys. Lett. 104, 091103
[21] Shen, S.-C., Kao, T.-T., Kim, H.-J., Lee, Y.-C., Kim, J., Ji, M.-H., Ryou, J.-H., Detchprohm, T., Dupuis, R.D, “GaN/InGaN avalanche phototransistors,” Appl. Phys. Express, Vol.8, 032101, 2015.
[22] Meixin Feng, Jin Wang, Rui Zhou, Qian Sun, Hongwei Gao, Yu Zhou, Jianxun Liu, Yingnan Huang,Shuming Zhang, Masao Ikeda, Huaibing Wang, Yuantao Zhang, Yongjin Wang , and Hui Yang (2018).On-Chip Integration of GaN-Based Laser, Modulator,and Photodetector Grown on Si Ieee Journal Of Selected Topics In Quantum Electronics24(6) , 820-0305
[23] Ariane L. Beck, Bo Yang, S. Wang, Charles J. Collins, Joe C. Campbell, Jerry M. Woodall (2004). Quasi-Direct UV/Blue GaP Avalanche Photodetectors. IEEE Journal of Quantum Electronics., 40, 1695.
[24] Luna Optoelectronics,“GaN UV Photodiode,”SD012-UVA-011 datasheet, Apr. 2016
[25] Xiaping Chen, Huili Zhu, Jiafa Cai, Zhengyun Wua (2007). High-performance 4H-SiC-based ultraviolet p-i-n photodetector. Journal of Applied Physics., 102, 024505.
[26] Thorlabs, “GaP Photodiode,” FGAP71 datasheet, Apr. 2017
[27] Roithner Lasertechnik, “UVA SiC photodiode,” SIC01S-A18 datasheet, Mar. 2017
[28] Roithner Lasertechnik, “UV Sensor Modules based on GaN.” GUVB-T11GM-LA datasheet, Aug. 2018
[29] S. O. Kasap, 光電半導體元件 Optoelectronics and Photonics Principles and Practices, 全威圖書有限公司，台北，2006。
[30] 許登坡，｢氮化鎵光電晶體之研發｣，國立台灣科技大學電子工程所碩士學位論文，台北，2016。
[31] 劉博文，光電元件導論，全威圖書有限公司，台北，2005。
[32] Muth, J.F, J.H. Lee, I.K. Shmagin, R.M. Kolbas, H.C. Casey, Jr., B.P.Keller, U.K. Mishra, S.P. DenBaars, “Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements,” Appl. Phys. Lett. vol. 71, issue 18, Nov. 1997.
[33] Ting Li, D. J. H. Lambert, A. L. Beck, C. J. Collins, B. Yang, M. M. Wong, U. Chowdhury, R. D. Dupuis and J. C. Campbell, “Solar-blind AlxGa1-xN-based metal ultraviolet photodetectors,” Electronics Letters, vol. 36, no. 18, pp. 1581-1583, August 2000.
[34] Q. Chen, J. W. Yang, A. Osinsky, S. Gangopadhyay, B. Lim, M. Z. Anwar, M. A. Khan, D. Kuksenkov, and H. Temkin, “Schottky barrier detectors on GaN for visible-blind ultraviolet detection,” Applied Physics Letters, vol. 70, no. 17, pp. 2277-2279, 1997.
[35] S. Nakamura, T. Mukai, M. Senoh, and N. Iwasa, “Thermal Annealing Effects on P-Type Mg-Doped GaN Films,” Japanese Journal of Applied Physics, vol. 31, pp. L139-L142, 1992.
[36] H. Jiang, T. Egawa, H. Ishikawa, “AlGaN Solar-Blind Schottky Photodiodes Fabricated on 4H-SiC,” IEEE PHOTONICS TECHNOLOGY LETTERS, vol. 18, no. 12, June 15, 2006.
[37] J. P. Shim, S. R. Jeon, Y. K. Jeong, D. S. Lee, ”Improved Efficiency by Using Transparent Contact Layers in InGaN-Based p-i-n Solar Cells,” IEEE ELECTRON DEVICE LETTERS, vol. 31,no. 10, Oct. 2010.
[38] 蕭宏，半導體製程技術導論-第三版，全華圖書有限公司，台北，2014。
[39] 施敏，半導體元件物理與製作技術-第三版，國立交通大學出版社，新竹，2013。
[40] 廖彥超，｢有無電流阻擋層與不同透明導電層材料與厚度對氮化鎵發光二極體電流分佈的影響｣，國立台灣科技大學電子工程所碩士學位論文，台北，2011。
[41] 吳宗哲．｢積體化氮化鎵發光二極體與光電晶體之先期實驗結果｣．國立台灣科技大學電子工程所碩士學士論文，台北，2019。