本論文旨在以氮化鎵開關元件研製一多階式串聯-串聯諧振式雙向直流-直流轉換器，此電路架構一次側與二次側所有元件皆為對稱型放置設計，並透過三階箝位架構，使功率開關元件電壓應力為輸入電壓的一半，因此得以選用耐壓較低但切換損耗較低之氮化鎵功率開關。
本論文實際完成一輸出功率3.3kW，輸入800V、輸出800V的高壓雙向隔離型之半橋串聯-串聯諧振式轉換器並使用耐壓僅650V的氮化鎵開關元件來驗證此架構降低電壓應力的功能，最後實驗結果顯示滿載效率可達到96%以上。

This thesis aims to develop a Multi-Level Bi-Directional resonant DC converter with GaN Component. The circuit structure is symmetrical between the primary and secondary sides. By using Three-Level clamping structure, the voltage stress of the power switching element is half of the input voltage. So GaN power switch with lower voltage rating but lower switching loss can be selected.
This thesis completes a high voltage Bi-Directional Series-Series half bridge Resonant DC-DC Converter with the specifications : output power of 3.3 kW, input voltage 800V, output voltage 800V. A 650V GaN component is used to verify the low voltage stress of this architecture. The final experimental results show that the full load efficiency can reach more than 96%.

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