本論文使用商用氮化鎵LED晶圓，利用矽擴散(Silicon Diffusion)製程，選擇性的將部分最上層的p-AlGaN反轉成n-AlGaN，使其結構由p-i-n變成n-p-i-n結構，在同一片晶圓完成發光二極體、p-i-n結構光偵測器以及n-p-i-n結構光電晶體三種元件，並量測發光二極體的光電特性，以及兩種光偵測器的特性包括暗電流、外部量子效率、在不同偏壓下的響應率以及響應時間。
　　首先評估發光二極體在此積體化製程下的特性量測結果。在電性量測中，發光二極體的啟動電壓約為3.1 V，串聯電阻約為182 Ω。光學特性中，發光二極體在電流為10 mA下的光輸出功率為3.2 mW。證明此積體化製程是成功相容的，並不影響發光二極體的光電特性。再來比較兩種同時製作的光偵測器。p-i-n結構光偵測器的外部量子效率峰值波長約為384 nm，其外部量子效率值在不同逆向偏壓0 V、1.5 V、3 V、5 V、7 V下分別為44.3 %、51.6 %、56.1 %、56.9 %、59.5 %。n-p-i-n光電晶體元件的外部量子效率峰值波長約為384 nm，其外部量子效率值在不同逆向偏壓0 V、1.5 V、3 V、5 V、7 V下分別為32.3 %、37.3 %、39.8 %、47.9 %、74.7 %。n-p-i-n光電晶體元件逆向偏壓在5 V之前與p-i-n光偵測器有著相似的特性，並擁有p-i-n光偵測器響應速度快的優點。而元件在逆向偏壓7 V時開始有明顯的電流增益，使得n-p-i-n光電晶體的響應率與外部量子效率都高於p-i-n光偵測器，因此更適合做為UV光偵測器。

This paper used commercial GaN LED wafers by using silicon diffusion process. Three components of light-emitting diode, p-i-n structured photodetector and n-p-i-n structured phototransistor on the same wafer. The characteristics of light-emitting diodes are measured. The characteristics of two photodetectors included dark current, external quantum efficiency, responsivity under different bias voltages, and response time.
First, the measurement results of the light-emitting diode. In the electrical measurement, the turn on voltage of the light-emitting diode is about 3.1 V, and the series resistance is about 182 Ω. In the optical characteristics, the light output power of the light-emitting diode at a current of 10 mA is 3.2 mW. It’s proving that this integrated process is successfully compatible.
The external quantum efficiency of p-i-n structure photodetector has a peak wavelength about 384 nm, when the bias voltage VCE is 0 V, 1.5 V, 3 V, 5 V, 7 V, the EQE of the peak is 44.3 %, 51.6 %, 56.1 %, 56.9 %, 59.5 % respectively. The external quantum efficiency of n-p-i-n structure phototransistor has a peak wavelength about 384 nm, when the bias voltage VCE is 0 V, 1.5 V, 3 V, 5 V, 7 V, the EQE of the peak is 32.3 %, 37.3 %, 39.8 %, 47.9 %, 74.7 % respectively.
The reverse bias of n-p-i-n phototransistor device has similar characteristics to p-i-n photodetector before 5 V, and has the advantage of fast response speed of p-i-n photodetector. The responsivity and external quantum efficiency of n-p-i-n phototransistor are higher than p-i-n photodetector, so it is more suitable as a UV photodetector.

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