由於鐵電薄膜多為氧化物，且製程溫度都是在高溫，因此大多搭配使用抗高溫氧化之電極材料作為電極。貴金屬Pt是常使用之材料，然而Pt電極的價格偏高，若能使用較便宜的金屬電極來代替，又能維持導電性，進一步又能降低成本，那麼對元件的製程的成本會大幅的降低，所以本文以Ag電極來取代Pt電極，藉由實驗來了解銀薄膜電極在不同溫度的揮發狀況，試圖匹配緩衝層(buffer Layer )或降低製程溫度和改變製程方法，來了解銀電極應用於鐵電材料的可能性。實驗中並利用XRD、SEM、四點探針，來探討Ag和LSMO-Ag複合材料薄膜電極在不同退火溫度下之薄膜結構、電性以及導電機制。
　　由實驗結果中， SEM微觀分析知道以銀做為下電極，銀電極在溫度超過300℃時會產生突起現象，且在鍍製LSMO-Ag(1:1)電極時，在鍍膜過程中，銀已開始擴散，雖然在400℃內，複合材料(LSMO-Ag)電極可以防止銀的擴散，但溫度一旦超過400℃時，銀會開始產生團聚突起現象，當溫度超過700℃時，下電極銀在高溫時，開始從未析出區域析出，這說明銀在此溫度開始揮發，也顯示銀含量的多寡，對整個下電極品質的影響有很大的關聯。最後試圖重新配製電極材料成份，以複合材料(LSMO-Ag)來代替純銀電極，並研究此複合材料代替Pt電極後，鐵電材料的特性為何。
研究中發現，電極雖然經過重新的配製後，可以順利量測出鐵電性，而PZT/LSMO-Ag結構在不同溫度退火熱處理後，PZT薄膜的殘留極化值會受到底下基材不同溫度的退火條件而有不同的電性表現，當LSMO-Ag熱處理溫度 600℃時，其PZT的殘留極化值為11.10μC/cm2，而隨著退火溫度增加到700℃∼800℃時，殘留極化值降低到5.50μC/cm2，所以殘留極化值會隨著溫度的上昇而減少。這是因為底電極的LSMO-Ag複合材料中，銀隨著溫度的上昇產生不穩定的擴散與揮發，隨著熱處理溫度的增高，電阻率大幅提升，底電極與PZT的介面擴散越嚴重，造成量測的漏電流越大。
研究最後以CO2雷射退火，來減少底電極與鐵電薄膜在爐管熱處理時，介面所產生的擴散或半導化的問題。PZT薄膜在經由雷射退火後，在底電極熱處理600℃的試片，其殘留極化值Pr約為15.48 μC/cm2，與爐管退火PZT的殘留極化值11.10μC/cm2高，而在底電極熱處理700℃的試片殘留極化值Pr約為14.42 μC/cm2，與爐管退火PZT的殘留極化值7.78μC/cm2比較，其殘留極化值以增加二倍。由此可知，CO2雷射直接能量處理後的試片，已減少內部元素交互擴散的問題，可以改善其元件結構的鐵電特性。

In order to lower the price of the processing, we substitute Ag for Pt as an electrode material. Since most ferroelectric thin films are oxide and the temperature of the processing must be higher, one of the properties of electrode materials must have high-temperature resistance. In this work, we estimate the possibility of applying pure Ag to ferroelectric components by utilizing buffer layer or lower the temperature of the processing, and improve process method. We discuss microstructures, electrical properties and the conductivity mechanism of Ag and Ag-doped LSMO composite thin films through different annealing temperature.
SEM microanalysis shows that diffusion behavior using Ag as bottom electrode is occurred when annealing temperature is beyond 300℃. Also, when we deposit LSMO-Ag(1:1)electrode, Ag begins to diffuse during depositing at the same condition. However, LSMO-Ag electrode is able to prevent the diffusion of Ag under 400℃, but clustering beyond 400℃.When temperature is beyond 700℃, Ag precipitates from non-precipitate-zone. This result represents that the quality of bottom electrode significantly depends on the amount of Ag. Therefore, we attempt to redesign a compatible electrode using LSMO-Ag replacing pure Ag, and study the properties of this composite replacing noble Pt electrode.
During this research, we discovered that we could get ferro-electric ability with our electrode, but after PZT/LSMO-Ag structure annealed under different temperature, remained polarization of PZT would effected by the different material which annealed in the different conditions. When heat treatment were operated under 600 degree Celsius on LSMO-Ag. the remained polarization of PZT were 11.10μC/cm2, when the annealing temperature were up to 700~800, remained polarization were reduced to 5.50μC/cm2, In accordance with it, remained polarization would be reduced when the annealing temperature grow higher. this phenomenon means that when the heat treatment temperature is higher, diffusion would happened in the interface between bottom electrode and PZT, because of the silver in bottom electrode of LSMO-Ag material would unstably diffuse and evaporated, so the leakage current would be detected more when annealing temperature were higher.
In the last part of this research, we would use CO2 laser annealing method to reduce the problem that diffusion and semiconductirization happened between bottom electrode and ferroelectric thin film, and improve the ferroelectric ability of this structure.
After laser annealing method operated on PZT thin film, the remained polarization Pr was 15.48μC/cm2 which the bottom electrodes on substrates heat treated at 600℃. Compared with the substrates which coated PZT on them and heat treated with furnace, remained polarization was 11.10μC/cm2. The remained polarization Pr of the substrates which were heat treated with laser annealing at 700℃ was 14.42μC/cm2, compared with the bottom electrodes which heat treated with furnace, remained polarization was 7.78μC/cm2. So we were informed that laser annealing method operated on substrates could reduce inter diffusion and enhance ferroelectric properties.

1. A. Springer, R.Weigel, A. Pohl and F. Seifert, “Wireless identification and sensing using surface acoustic wave devices,” Mechatronics, 9, 745-56 (1999).
2.G. Feuillard, M. Lethiecq and L. Pourcelot, “Comparative performance of piezoceramic and crystal SAW filters,” IEEE Transactions on ultrasonics, ferroelectrics and frequency control, vol. 44, no. 1, 303-06 (1997).
3.J. Y. Yoo, K. H. Yoon, S. M. Hwang, S. J. Suh, J. S. Kim, C. S. Yoo,“Electrical Characteristics of High Power Piezoelectric Transformer for 28W Fluorescent Lamp”, Sens. Actuators. A Phys., 90[5], 132-137(2001).
4.J. Y. Yoo, K. H. Yoon, Y. W. Lee, S. J. Suh, J. S. Kim, C. S. Yoo, “Electrical Characteristics of the Contour-Vibration-Mode Piezoelectric Transformer with Ring/Dot Electrode Area Ratio”, Jpn. J. Appl. Phys., 39[5], 2680-2684(2000).
5.S. Ezhilvalavan, T. Y. Tseng,“Progress in The Developments of (Ba,Sr)TiO3 (BST) Thin Films for Gigabit Era DRAMs”, Mater. Chem. Phys., 65[8], 227-248(2000).
6.S. R. Gilbert, D. Ritchey, M. Tavassoli, J. Amano, L. Colombo, S. R. Summerfelt,“Cross-Contamination during Ferroelectric Nonvolatile Memory Fabrication”, J. Electrochem. Soc., 148[4], 195-199(2001).
7.南台科技大學MEMS and Nano Technology 網站介紹
8. M. S. Chen, T. B. Wu, J. M. Wu, “Effect of Textured LaNiO3 Electrode on the Fatigue Improvement of Pb(Zr0.53Ti0.47)O3 Thin Films”, Appl. Phys. Lett., 68[10], 1430-1432(1996).
9. W. B. Wu, K. H. Wong, C. L. Choy, Y. H. Zhang,“Top-Interface-Controlled Fatigue of Epitaxial Pb(Zr0.52Ti0.58)O3 Ferroelectric Thin Films on La0.5Sr0.5MnO3 Electrodes”, Appl. Phys. Lett., 77[10], 3441-3443(2000).
10.I. Stolichnov, A. Tagantsev, N. Setter, J. S. Cross, M. Tsukada“Top-Interface-Controlled Switching and Fatigue Endurance of (Pb,La)(Zr,Ti)O3 Ferroelectric capacitors”, Appl. Phys. Lett., 74[6], 3552-3554(1999).
11. F. Wang and S. Leppavuori, “Properties of epitaxial ferroelectric PbZr0.56Ti0.44O3 heterostructures with La0.5Sr0.5CoO3 metallic qxide electrodes,” J. Appl. Phys., vol.82, no.3, 1293-98 (1997).
12.S. M. Yoon, E. Tokumitsu and H. Ishiwara, “Preparation of PbZrxTi1-xO3/La1-xSrxCoO3 heterostructures using the sol-gel method and their electrical properties,” Appl. surface science, 117, 447-52 (1997)
13. FRANCO JONA, G. SHIRANE, “Ferroelectric Crystals”, Dover Publications, Inc., p11~p14, (1993).
14.Y. H. Xu, “Ferroelectric Materials and Their Applications”, North-Holland, New York, 102(1991).
15.A. L. Moulson, I. M. Herbert, “Electroceramics”, Chapman and Hall,New York U.S.A. (1990).
16.J. P. Schaffer, A. Saxena, S. D. Antolovich, T. H. Sanders, S. B. Warner, “The science and design of engineering materials”, Richard D. Irwin. Inc., Chicago U.S.A.(1995), pp497-503.
17. G. H. Haertling, “Ferroelectric Ceramics: History and Technology”, J. Am. Ceram. Soc., Vol. 82, No. 4, pp797-818, (1999).
18. T. Yamamoto, M. Saho and K. Okazaki, “Electrical Properties and Microstructure of Ca Modified PbTiO3 Ceramics”, Jpn. J. Appl. Phys., Vol. 26, pp. 57~63, (1987).
19. Márta Déri, “Ferroelectric Ceramics”, Maclaren and Sons LTD, London, 8-9(1966).
20. Y. H. Xu, “Ferroelectric Materials and Their Applications”, North-Holland, New York, 102(1991).
21. A. L. Moulson, I. M. Herbert, “Electroceramics”, Chapman and Hall,New York U.S.A. (1990).
22. J. P. Schaffer, A. Saxena, S. D. Antolovich, T. H. Sanders, S. B. Warner, “The science and design of engineering materials”, Richard D. Irwin. Inc., Chicago U.S.A.(1995), pp497-503.
23. 吳朗，“電子陶瓷”，全欣科技(1994)。
24.S. Barison, A. De Battisti, M. Fabrizio, S. Daolio, C. Piccirillo, “Surface Chemistry of RuO2/IrO2/TiO2 Mixed-Oxide Electrodes: Secondary Ion Mass Spectrometric Study of the Changes Induced by Electrochemical Treatment”, Rapid commun. Mass Spectrom., 14[11], 2165-2169(2000).
25.J. H. Ahn, W. J. Lee, H. G. Kim, “Oxygen diffusion through RuO2 bottom electrode of integrated ferroelectric capacitors”, Mater. Lett., 38[2], 250-253(1999).
26.M. S. Chen, T. B. Wu, J. M. Wu, “Effect of Textured LaNiO3 Electrode on the Fatigue Improvement of Pb(Zr0.53Ti0.47)O3 Thin Films”, Appl. Phys. Lett., 68[10], 1430-1432(1996).
27.W. B. Wu, K. H. Wong, C. L. Choy, Y. H. Zhang,“Top-Interface-Controlled Fatigue of Epitaxial Pb(Zr0.52Ti0.58)O3 Ferroelectric Thin Films on La0.5Sr0.5MnO3 Electrodes”, Appl. Phys. Lett., 77[10], 3441-3443(2000).
28.S. Madhukar, S. Aggarwal, A. M. Dhote, R. Ramesh, A. Krishnan, D. Keeble, E. Poindexter, “Effect of Oxygen Stoichiometry on the Electrical Properties of La0.5Sr0.5CoO3 Electrodes”, J. Appl. Physi., 81[8], 3543-3547(1997).
29.I. Stolichnov, A. Tagantsev, N. Setter, J. S. Cross, M. Tsukada, “Top-Interface-Controlled Switching and Fatigue Endurance of (Pb,La)(Zr,Ti)O3 Ferroelectric capacitors”, Appl. Phys. Lett., 74[6], 3552-3554(1999).
30. Y. S. Touloukian, “Thermo-physical Properties of Matter”, Vol.12 Thermal Expansion—Metallic Elements and alloys, IFI, New York, (1970).
31.Y. S. Touloukian, “Thermo-physical Properties of Matter”, Vol.13 Thermal Expansion—Nonmetallic Solids, IFI, New York, 1970.
32.J. S. Lee, H. J. Kwon, Y. W. Jeong, H. H. Kim, C. Y. Kim,
“Microstructures and Electrical Resistivities of The RuO2 Electrode on
SiO2/Si Annealed in The Oxygen Ambient.”, J. Mater. Res.,
Vol.11[1], 137-140(1996).
33.N. Q. Minh, T. Takehiko, “Science and Technology of Ceramic Fuel Cells”, Elsevier, New York, 136-137(1995).
34.J. Santen, G. Jonker, “Electrical Conductivity of Ferromagnetic Compounds of Manganese with Perovskite Structure”, Physica XVI, No.7-3, 599-560(1950).
35.G. Jonker, J. Santen, “Magnetic Compounds with Perovskite Structure III. Ferromagnetic Compounds of Cobalt”, Physica XIX, 120-130(1953).
36.S. Sato, Y. Nakano, A. Sato, T. Nomura, “Mechanism of Improvement of Resistance Degradation in Y-doped BaTiO3 Based MLCCs with Ni Electrodes under Highly Accelerated Life Testing”, J. Eur. Ceram. Soc., 19[6], 1061-1065(1999).
37.S. Caston, R. McCarley, “Characteristics of Nanoscopic Au Band Electrodes”, J. Electroanal. Chem., 259[7], 124-134(2002).
38.B. Vilquin, G. Le Rhun, R. Bouregba, G. Poullain, H. Murray,“Effect of In Situ Pt Bottom Electrode Deposition and of Pt Top Electrode Preparation on PZT Thin Films Properties”, Appl. Surf. Sci., 515[12], 63-73(2002).
39.R. H. Zuo, L. T. Li, Z. L. Gui,“Effects of BaTiO3 Additive on Densification Mechanism of Silver–Palladium Paste”, Mater. Chem. Phys., 74[3], 182-186(2002).
40.L. Szpyrkowicz, J. Naumczyk, F. Grandi, “Electrochemical Treatment of Tannery Wastewater Using Ti/Pt and Ti/Pt/Ir Electrodes”, Water Res., 29[2], 517-524(1995).
41.S. F. Wang, J. P. Dougherty, W. Huebner, J. G. Pepin, “Silver-Palladium Thick-Film Conductors”, J. Am. Ceram. Soc., 77 [12], 3051-3072(1994).
42. Mehran ArbabU, “The base layer effect on the d.c. conductivity and structure of
direct current magnetron sputtered thin films of silver” , Thin Solid Films 381 2001
(15~21)
43. K.H. Choi,, J.Y. Kim, Y.S. Lee, H.J. Kim, “ITO/Ag/ITO multilayer films for
the application of a very low resistance transparent electrode” , Thin Solid Films
341 152~155(1999)
44. T.L. Alford, Linghui Chen , Kaustubh S. Gadre, “Stability of silver thin films on
various underlying layers at elevated temperatures” , Thin Solid Films 429
(2003) 248–254
45. J. Li, Q. Huang, Z. W. Li, L. P. You, S. Y. Xu, C. K. Ong, “Enhanced
Magnetoresistance in Ag-Doped Granular La2/3Sr1/3MnO3 Thin Films Prepared by
Dual-Beam Pulsed-Laser Deposition”, J. Appl. Physi., 89[6], 7428-7430(2001).
46.A. Tiwari, A. Chug, C. Jin, D. Kumar, J. Narayan, “Integration of Single Crystal La0.7Sr0.3MnO3 Films with Si(001)”, Solid State Commum., 121[11], 679-682(2002).
47.J. Santen, G. Jonker, “Electrical Conductivity of Ferromagnetic Compounds of Manganese with Perovskite Structure”, Physica XVI, No.7-3, 599-560(1950).
48.A. Chakraborty, P. S. Devi , H. S. Maiti, “Preparation of La1-xSrx MnO3 (0≦x≦0.6) Powder by Autoignition of Carboxylate-Nitrate Gels” , Mater. Lett., 20, 63-69(1994).
49.M. Schiessl, E. Ivers-Tiffee and W. Wersing, “Ceramic Cathode Materials (La1-uSruMn1-xCoxO3-δ) for Solid Oxide Fuel Cell (SOFC) Application”, 2607-2614 in Materials Science Monographs, Vol. 66D, Ceramic Today-Tomorrow’s Ceramics. Edited by P. Vincenzini. Proceedings of the 7th International Meeting on Modern Ceramics Technologies (7th CIMTEC-World Ceramics Congress 1990), Elsevier Sience, New York, 1991.
50.N. Zhang, W. P. Ding, Z. B. Guo, W. Zhong, D. Y. Xing, Y. W. Du, G. Li, Y. Zheng, “Large Lattice Compression Coefficient and Uniaxial Piezoresistance in CMR Perovskite La1-xSrx MnO3 (0.15≦ x ≦0.25)”, ZEITSCHRIFT FUR PHYSIK B, vol. 102, Issue 4, 461-465 (1997).
51.M. J. Villafuerte, S. Duhalde, M. C. Terzzoli, G. Polla, G. Leyva, L. Correra,
“Structural and Transport Properties of La0.67Sr0.33 Mn1-xSnxO3 Thin Films”, Appl.
Phys. A (Materials Science & Processing), vol. 69, Issue 7, 565-567(1999).
52.D. Nicolaescu , Valeriu Filip, Junji Itoh, Fumio Okuyama,” Analysis of a pressure sensor using n-Si/nitrogen doped diamond cathodes”, J. Vac. Sci. Technol. B 18(2) , Mar/Apr 2000, American Vacuum Society, pp1077-1080
53.S. H. Xia, J. Liu, D. F. Cui, J. H. Han, S. F. Chen and L. Wang, “Investigation on a novel vacuum microelectronic pressure sensorwith stepped field emission array”, J. Vac. Sci. Technol. 15(4), Jul/Aug 1997, American Vacuum Society. pp1573-1576.
54.蔣志陽，逢甲大學自動控制工程研究所碩士論文，1990年。
55.H .Z. Jin and Jing Zhu, ”Size effect and fatigue mechanism in ferroelectric thin films”, J.Appl.Phys.,92(8),4594(2002)
56.C. Xiong, Y. Tang, J. Gao, H. Zhu, L. Pi, K. Li, J. Zhu and Y. Zhang, “Magnetoresistivity effect in La0.67Sr0.33MnO3/Pr0.7Sr0.33MnO3/ La0.67Sr0.33MnO3 trilayered films,” American Phys. Soc., vol.59, no.14, 9437-41 (1999).
57.F. Wang and S. Leppavuori, “Properties of epitaxial ferroelectric PbZr0.56Ti0.44O3 heterostructures with La0.5Sr0.5CoO3 metallic oxide electrodes,” J. Appl. Phys., vol.82, no.3, 1293-98 (1997).
58.S. M. Yoon, E. Tokumitsu and H. Ishiwara, “Preparation of PbZrxTi1-xO3/La1-xSrxCoO3 heterostructures using the sol-gel method and their electrical properties,” Appl. surface science, 117, 447-52 (1997).
59.S. Aggarwal, S. R. Perusse, B. Nagaraj and R. Ramesh, “Oxide electrodes as barriers to hydrogen damage of Pb(Zr,Ti)O3-based ferroelectric capacitors”, J. Appl. Phys., vol.74, no.20, 3023-25 (1999).
60.江進富, “以溶膠凝膠法製備鋯鈦酸鉛鐵電薄膜與錳酸鍶鑭氧化物電極薄膜及應用元件製程規劃”, 國立台灣科技大學碩士論文, 民國90年6月。
61.范明忠, “磁控式濺鍍法製備氧化物電極薄膜之研究及元件應用”, 國立台灣科技大學碩士論文, 民國91年6月。
62. J. Li, C. K. Ong, Q. Zhan, D. X. Li, “Microstructure and inter-grain magnetoresistance in Ag-doped polycrystalline La0.67Sr0.33MnO3 thin films”, J. Phys:condens. Matter 14,
6341-6351, 2002.
63.T. Shiosaki, T. Yamamotot, T. Oda, K. Harada and Kawabata, “Low temperature growth of piezoelectric AlN film for surface and bulk wave transducers by RF reactive plannar magnetron sputtering”, IEEE Ultrasonic Symposium, 451-54(1980).
64.A. Hachigo, H. Nakahata, K. Higki, S. Fujii and S. Shikata, “Heterepitaxial growth of ZnO films on diamond(111) plane by magnetron sputtering”, Appl. Phys. Lett., 65, 2556-58 (1994).
65.W. D. Westwood, “Reactive sputter deposition, handbook of plasma processing technology”, Springer-Verlag Berlin Heidelberg, U.S.A., Chap. 9 (1992).
66.N. Okawa, H. Tanaka, R. Akiyma, T. Matsumoto and T. Kawai, “Effects of film thickness on surface flatness and physical properties in La1-xSrxMnO3 thin films investigated by scanning tunneling microscopy,” Solid state communications, 114, 601-05 (2000).
67.H. L. Ju, K. M. Krishnan, “Evolution of strain-dependent transport properties in ultrathin La0.67Sr0.33MnO3 films”, J. Appl. Phys., vol.83, no.11, 7073-75 (1998).
68.C. Xiong, Y. Tang, J. Gao, H. Zhu, L. Pi, K. Li, J. Zhu and Y. Zhang, “Magnetoresistivity effect in La0.67Sr0.33MnO3/Pr0.7Sr0.33MnO3/ La0.67Sr0.33MnO3 trilayered films,” American Phys. Soc., vol.59, no.14, 9437-41 (1999)
69.T. Namikawa, K. Kaneta, N. Matsushita, S. Nakagawa and M. Naoe, “Annealing effect on magnetic characteristics on (La,Sr)MnO3 sputter films,” IEEE Transactions on magnetics, vol.35, no.5, 2850-52 (1999).
70.N. Floquet, J. Hector and P. Gaucher, “Correlation between structure, microstructure, and ferroelectric properties of PbZr0.2Ti0.8O3 integrated film：influence of the sol-gel process and the substrate,” J. Appl. Phys., vol.84, no.7, 3815-26 (1998).
71.T. Omori, T. Suzuki, K. Hashimoto and M. Yamaguchi, “Selective area preparation of PZT discs and their ultrasonic applications,” IEEE Ultrasonics Symposium, 991-95 (2000).
72.S. Y. Chen and J. W. Chen, “Texture development, microstructure evolution, and crystallixation of chemically derived PZT thin films,” J. Am. Ceram. Soc., vol.81, no.1, 97~105 (1998).
73.N. Soyama, K. Maki, S. Mori and K. Ogi, “Preparation of PZT thin films for low voltage application by sol-gel method,” IEEE, 611-14 (2001).
74.R. T. Young, C. W. White, G. J. Clark, J. Narayan, W. H. Christie, M. Murakami, P.
W. King, and S. D. Kramer, “Laser annealing of boron-implanted silicon”, Appl.
Phys. Lett., 32(3), pp.139~141 (1978).
75.H. Qatanabe, H. Miki, S. Sugau, K. K. and T. Kioda, “Crystallization Process of
Polycrystalline Silicon by KrF Excimer Laser Annealing”, Jpn. J. Appl. Phys.,
Vol.33, No.8, part 1, pp.4491~4498 (1994).
76.A. Gat, J. F. Gibbons, T. J. Magee, J. Peng, V. R. Deline and P. Williams, “Physical and electrical properties of laser-annealed ion-implanted silicon”, Appl. Phys. Lett., 32(5), pp.276~278 (1978).
77.D. Bersani, P. P. Lottici, A. Montenero, S. Pigoni, “Phase transformations in sol-gel
prepared PbTiO3”, Journal of Materials Science, 31, pp.3153~3157 (1996).
78.Y. Matsui, M. Okuyama, N. Fujita, and Y. Hamakawa, “Laser annealing to produce
ferroelectric-phase PbTiO3 thin films”, J. Appl. Phys. 52(8), pp.5107~5111 (1981).
79.A. Ito, A. Machida and M. Obara, “Epitaxial Growth of BaTiO3 Optical Thin Films
by Pulsed KrF Laser Deposition and in situ Pulsed Laser Annealing”, Jpn. J. Appl.
Phys. Vol.36, No.6B, part 2, pp.L805~L807 (1997).
80.Y. Zhu, J. Zhu, Y. J. Song, and S. B. Desu, “Laser-assisted low temperature
processing of Pb(Zr, Ti)O3 thin film”, Applied Physics Letters, Vol.73, No.14,
pp.1958~1960 (1998).
81.X. M. Lu, J. S. Zhu, X. F. Huang, C. Y. Lin, and Y. N. Wang, “Laser-induced phaser
transformation from amorphous to perovskite in PbZr0.44Ti0.56O3 films with the
substrate at room temperature”, Appl. Phys. Lett., 65(16), pp.2015~2017 (1994).
82. 周嘉峰, “雷射退火低溫製備鈦鋯酸鉛薄膜之研究”, 國立台灣科技大學碩士論文, 民國90年6月。