在染料敏化太陽能中(Dye-Sensitized Solar Cell, DSSC)，為取代廣泛使用而又昂貴的鉑(Pt)背電極，本研究利用合成出的I-III-VI族Cu2S-CuInS2(Cu-CIS)異質結構材料，將其應用於背電極上，並封裝 Cu-CIS背電極之DSSC後加以量測。同時針對最佳化之Cu-CIS 背電極與Pt背電極做電化學儀器之量測與分析，進一步了解其動力學行為。在量子點敏化太陽能電池(Quantum Dots Sensitized Solar Cells, QDSSC)中，利用相同製程合成I-III-VI族之量子點(Quantum dots) CuInS2 (In-CIS)，將預先合成的In-CIS量子點沉積於光電極上的二氧化鈦，再以連續式離子層吸附與反應（Successive Ionic Layer Adsorption and Reaction, SILAR）法將量子點沉積於TiO2上，並與Cu-CIS及Pt背電極材料封裝，以作為探討光電轉換效能分析之依據。再藉由能隙觀點，以討論兩種不同型式所結合而成的量子點共敏化效應，有利於電子之躍遷傳導。此外，由於共敏化效應，相較於僅以SILAR或熱合成沉積於二氧化鈦上，其IPCE的吸收波長來得更寬，轉換效能更高。而利用太陽能模擬所量測的光電轉換效率，In-CIS/CdS量子點之組成可達2.37%，明顯優於以其他類型量子點共敏化。從結果顯示，相較於Pt背電極，Cu-CIS具備高催化性，兼且低成本之優勢，因此，存在有實用的經濟效益。

In This study, we synthesized the I-III-VI group Cu2S-CuInS2 (Cu-CIS) heterostructure as candidate to replace the expensive platinum (Pt) counter electrode that has been commonly applied. DSSC analysis then implemented to characterize as-prepared Cu-CIS, while electrochemical analysis was employed to understand dynamic behavior of Cu-CIS and Pt counter electrode. In other part, we using the same process to Indium-rich CuInS2 (In-CIS) quantum dots (Quantum dots) and further deposited on photoelectrode of titanium dioxide (TiO2) and SILAR (Successive Ionic Layer Adsorption and Reaction), respectively. By designing this QDSSC (Quantum Dots Sensitized Solar Cells), we improve comparing Cu-CIS and Pt along with observes the effect on combining two types of quantum dot sensitization through energy level perspective. Furthermore, as-prepared hot synthesis SILAR deposited on the titanium dioxide also investigated Incident Photon to Current Conversion Efficiency (IPCE) where perform wider absorption wavelength and higher conversion efficiency than commonly counter electrode. In QDSSC, the photoelectric conversion efficiency is 2.37% of In-CIS/CdS QDs, which is better than other types of quantum dots results of co-sensitization significantly. The resulted Cu-CIS can perform better catalytic activity than conventional Pt counter electrode as well as low cost requirement. The resulted data could claim the practical benefit on using Cu-CIS as counter electrode.

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