本研究採用預先合成法(Pre-synthesis)合成出Zn-CuInS2 (Z-CIS)與Cd-CuInS2 (Cd-CIS)四元量子點，透過改變前驅物比例，探討量子點材料特性與光電性質。利用其量子點作為量子點敏化太陽能電池(QDSSC)的光敏化劑，並使用寬能隙ZnS作為鈍化層，防止量子點及TiO2直接接觸到電解液造成暗電流產生。最後光電極與高比表面積之Cu2S背電極結合形成三明治結構之電池元件，在Cd-CIS QDSSC可獲得1.70%的光電轉換效率。為了更進一步提升效率，我們結合連續離子層吸附反應法(Successive Ionic Layer Adsorption and Reaction, SILAR)沉積CdS與CdSe量子點於光電極上，比較Cd-CIS/CdS(3)與Cd-CIS/CdSe(4)兩電極，發現後者有較佳的光電轉換效率，主要是因為CdSe有較寬的吸收範圍透過IPCE的測量，其起始吸光波長為670 nm，IPCE值在485 nm處有最大值為65%。最適化的電池結構為Cd-CIS/CdSe(4)/ZnS(3)||Cu2S，其電流密度Jsc為9.73 mA cm-2；開路電壓Voc為0.555 V；填充因子FF為53.0%，整體光電轉換效率高達2.86%。

In this study, we demonstrated synthesis of Zn-CuInS2 (Z-CIS) and Cd-CuInS2 (Cd-CIS) quantum dots (QDs) through pre-synthesis method. Motivated on providing QDs as excellent sensitizer for quantum dot-sensitized solar cells (QDSSC), the effect of precursor on the optical and electrical properties of quantum dots was regularly investigated. In the synthesis process, the zinc sulfide (ZnS) was further deposited on a photo-electrode as a passivation layer to prevent the current leakage on QDs, while electrolyte and counter electrode (Cu2S) are used to form sandwich structure of QDSSC. The power conversion efficiency (PCE) of Cd-CIS-based QDSSC was 1.70%. To improve the efficiency value, we subsequently combined CdS or CdSe as the co-sensitization. The photocurrent response from incident light was evaluated by Incident Photon to Current Conversion Efficiency (IPCE), with photocurrent onsets at 640 nm for the Cd-CIS/CdS and 670 nm for Cd-CIS/CdSe-based solar cells. The best device was performed by the Cd-CIS/CdSe(4)/ZnS(3) configuration where showed Jsc, Voc, FF, and values up to 9.73 mA cm-2, 0.555 V, 53.0%, and 2.86%, respectively.

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